Molecular dynamics simulations of Ar +-induced transport of fluorine through fluorocarbon films

David Humbird; David B. Graves; Xuefeng Hua; Gottlieb S. Oehrlein

doi:10.1063/1.1644338

Molecular dynamics simulations of Ar ⁺-induced transport of fluorine through fluorocarbon films

David Humbird
, David B. Graves
, Xuefeng Hua
, Gottlieb S. Oehrlein

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The molecular dynamics of Ar ⁺-induced transport of fluorine through fluorocarbon films were studied. It was observed that the F and C uptake is enhanced by energetic rate gas ion impact. The formation of Si-F bonds results in an increase in Si etch rate. The results indicate that the addition of Ar ⁺ increases the sticking coefficient of thermal CF ₂ which lead to higher incorporation of F and C.

Original language	English (US)
Pages (from-to)	1073-1075
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	7
DOIs	https://doi.org/10.1063/1.1644338
State	Published - Feb 16 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1644338

Cite this

@article{838c58da4e7349d28e1b9c624a3f72c3,

title = "Molecular dynamics simulations of Ar +-induced transport of fluorine through fluorocarbon films",

abstract = "The molecular dynamics of Ar +-induced transport of fluorine through fluorocarbon films were studied. It was observed that the F and C uptake is enhanced by energetic rate gas ion impact. The formation of Si-F bonds results in an increase in Si etch rate. The results indicate that the addition of Ar + increases the sticking coefficient of thermal CF 2 which lead to higher incorporation of F and C.",

author = "David Humbird and Graves, \{David B.\} and Xuefeng Hua and Oehrlein, \{Gottlieb S.\}",

year = "2004",

month = feb,

day = "16",

doi = "10.1063/1.1644338",

language = "English (US)",

volume = "84",

pages = "1073--1075",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Molecular dynamics simulations of Ar +-induced transport of fluorine through fluorocarbon films

AU - Humbird, David

AU - Graves, David B.

AU - Hua, Xuefeng

AU - Oehrlein, Gottlieb S.

PY - 2004/2/16

Y1 - 2004/2/16

N2 - The molecular dynamics of Ar +-induced transport of fluorine through fluorocarbon films were studied. It was observed that the F and C uptake is enhanced by energetic rate gas ion impact. The formation of Si-F bonds results in an increase in Si etch rate. The results indicate that the addition of Ar + increases the sticking coefficient of thermal CF 2 which lead to higher incorporation of F and C.

AB - The molecular dynamics of Ar +-induced transport of fluorine through fluorocarbon films were studied. It was observed that the F and C uptake is enhanced by energetic rate gas ion impact. The formation of Si-F bonds results in an increase in Si etch rate. The results indicate that the addition of Ar + increases the sticking coefficient of thermal CF 2 which lead to higher incorporation of F and C.

UR - https://www.scopus.com/pages/publications/1542679157

UR - https://www.scopus.com/pages/publications/1542679157#tab=citedBy

U2 - 10.1063/1.1644338

DO - 10.1063/1.1644338

M3 - Article

AN - SCOPUS:1542679157

SN - 0003-6951

VL - 84

SP - 1073

EP - 1075

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Molecular dynamics simulations of Ar ⁺-induced transport of fluorine through fluorocarbon films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this