Molecular dynamics simulations of Ar +-induced transport of fluorine through fluorocarbon films

David Humbird; David B. Graves; Xuefeng Hua; Gottlieb S. Oehrlein

doi:10.1063/1.1644338

Molecular dynamics simulations of Ar ⁺-induced transport of fluorine through fluorocarbon films

David Humbird, David B. Graves, Xuefeng Hua, Gottlieb S. Oehrlein

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The molecular dynamics of Ar ⁺-induced transport of fluorine through fluorocarbon films were studied. It was observed that the F and C uptake is enhanced by energetic rate gas ion impact. The formation of Si-F bonds results in an increase in Si etch rate. The results indicate that the addition of Ar ⁺ increases the sticking coefficient of thermal CF ₂ which lead to higher incorporation of F and C.

Original language	English (US)
Pages (from-to)	1073-1075
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	7
DOIs	https://doi.org/10.1063/1.1644338
State	Published - Feb 16 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1644338

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title = "Molecular dynamics simulations of Ar +-induced transport of fluorine through fluorocarbon films",

abstract = "The molecular dynamics of Ar +-induced transport of fluorine through fluorocarbon films were studied. It was observed that the F and C uptake is enhanced by energetic rate gas ion impact. The formation of Si-F bonds results in an increase in Si etch rate. The results indicate that the addition of Ar + increases the sticking coefficient of thermal CF 2 which lead to higher incorporation of F and C.",

author = "David Humbird and Graves, {David B.} and Xuefeng Hua and Oehrlein, {Gottlieb S.}",

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AU - Graves, David B.

AU - Hua, Xuefeng

AU - Oehrlein, Gottlieb S.

PY - 2004/2/16

Y1 - 2004/2/16

N2 - The molecular dynamics of Ar +-induced transport of fluorine through fluorocarbon films were studied. It was observed that the F and C uptake is enhanced by energetic rate gas ion impact. The formation of Si-F bonds results in an increase in Si etch rate. The results indicate that the addition of Ar + increases the sticking coefficient of thermal CF 2 which lead to higher incorporation of F and C.

AB - The molecular dynamics of Ar +-induced transport of fluorine through fluorocarbon films were studied. It was observed that the F and C uptake is enhanced by energetic rate gas ion impact. The formation of Si-F bonds results in an increase in Si etch rate. The results indicate that the addition of Ar + increases the sticking coefficient of thermal CF 2 which lead to higher incorporation of F and C.

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Molecular dynamics simulations of Ar ⁺-induced transport of fluorine through fluorocarbon films

Abstract

All Science Journal Classification (ASJC) codes

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