Molecular dynamics simulations of Ar +-induced transport of fluorine through fluorocarbon films

David Humbird, David B. Graves, Xuefeng Hua, Gottlieb S. Oehrlein

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

The molecular dynamics of Ar +-induced transport of fluorine through fluorocarbon films were studied. It was observed that the F and C uptake is enhanced by energetic rate gas ion impact. The formation of Si-F bonds results in an increase in Si etch rate. The results indicate that the addition of Ar + increases the sticking coefficient of thermal CF 2 which lead to higher incorporation of F and C.

Original languageEnglish (US)
Pages (from-to)1073-1075
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number7
DOIs
StatePublished - Feb 16 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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