Molecular dynamics simulation of ion bombardment on hydrogen terminated Si(001)2 × 1 surface

Koji Satake, David B. Graves

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The molecular dynamics simulation of ion bombardment on hydrogen terminated Si (001)2×1 surface was discussed. Normal incidence ion bombardment effects on dangling bond generation, adatom diffusion and nucleation were also studied. The analysis showed that the enhanced diffusion of Si adatoms due to ion bombardment was minor in comparison with thermal diffusion.

Original languageEnglish (US)
Pages (from-to)484-490
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume21
Issue number2
DOIs
StatePublished - Mar 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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