Molecular dynamics simulation of ion bombardment on hydrogen terminated Si(001)2 × 1 surface

Koji Satake; David B. Graves

doi:10.1116/1.1554939

Molecular dynamics simulation of ion bombardment on hydrogen terminated Si(001)2 × 1 surface

Koji Satake, David B. Graves

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The molecular dynamics simulation of ion bombardment on hydrogen terminated Si (001)2×1 surface was discussed. Normal incidence ion bombardment effects on dangling bond generation, adatom diffusion and nucleation were also studied. The analysis showed that the enhanced diffusion of Si adatoms due to ion bombardment was minor in comparison with thermal diffusion.

Original language	English (US)
Pages (from-to)	484-490
Number of pages	7
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	2
DOIs	https://doi.org/10.1116/1.1554939
State	Published - Mar 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1554939

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abstract = "The molecular dynamics simulation of ion bombardment on hydrogen terminated Si (001)2×1 surface was discussed. Normal incidence ion bombardment effects on dangling bond generation, adatom diffusion and nucleation were also studied. The analysis showed that the enhanced diffusion of Si adatoms due to ion bombardment was minor in comparison with thermal diffusion.",

author = "Koji Satake and Graves, {David B.}",

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AU - Graves, David B.

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AB - The molecular dynamics simulation of ion bombardment on hydrogen terminated Si (001)2×1 surface was discussed. Normal incidence ion bombardment effects on dangling bond generation, adatom diffusion and nucleation were also studied. The analysis showed that the enhanced diffusion of Si adatoms due to ion bombardment was minor in comparison with thermal diffusion.

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M3 - Article

AN - SCOPUS:0037357129

SN - 0734-2101

VL - 21

SP - 484

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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ER -

Molecular dynamics simulation of ion bombardment on hydrogen terminated Si(001)2 × 1 surface

Abstract

All Science Journal Classification (ASJC) codes

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