Molecular beam epitaxy of GaN/AlGaN multiple quantum wells: application to near-infrared intersubband transitions (1.5 - 4.2 μm)

H. M. Ng, C. Gmachl, S. N.G. Chu, A. Y. Cho

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

High quality GaN/AlGaN multiple quantum wells were grown by molecular beam epitaxy on (0001) sapphire substrates. The GaN wells range in thickness between 10 and 30Å while the AlGaN composition of the barriers was varied between 45 and 85%. Structural studies by cross-sectional transmission electron microscopy show that the GaN/AlGaN interfaces are abrupt with thickness uniformity on the order of one (Al)GaN monolayer. Intersubband absorption was observed between 1.5 to 4.2 μm depending on the well thickness and barrier height. This is the first observation of intersubband absorption at a wavelength as short as 1.5 μm for the III-nitrides material system.

Original languageEnglish (US)
Pages245-249
Number of pages5
StatePublished - Dec 1 2000
Externally publishedYes
Event27th International Symposium on Compound Semiconductors - Monterey, CA, United States
Duration: Oct 2 2000Oct 5 2000

Other

Other27th International Symposium on Compound Semiconductors
CountryUnited States
CityMonterey, CA
Period10/2/0010/5/00

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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