Molecular beam epitaxy of GaN/AlGaN multiple quantum wells: application to near-infrared intersubband transitions (1.5 - 4.2 μm)

H. M. Ng; C. Gmachl; S. N.G. Chu; A. Y. Cho

Molecular beam epitaxy of GaN/AlGaN multiple quantum wells: application to near-infrared intersubband transitions (1.5 - 4.2 μm)

H. M. Ng, C. Gmachl, S. N.G. Chu, A. Y. Cho

Research output: Contribution to conference › Paper › peer-review

Abstract

High quality GaN/AlGaN multiple quantum wells were grown by molecular beam epitaxy on (0001) sapphire substrates. The GaN wells range in thickness between 10 and 30Å while the AlGaN composition of the barriers was varied between 45 and 85%. Structural studies by cross-sectional transmission electron microscopy show that the GaN/AlGaN interfaces are abrupt with thickness uniformity on the order of one (Al)GaN monolayer. Intersubband absorption was observed between 1.5 to 4.2 μm depending on the well thickness and barrier height. This is the first observation of intersubband absorption at a wavelength as short as 1.5 μm for the III-nitrides material system.

Original language	English (US)
Pages	245-249
Number of pages	5
State	Published - 2000
Externally published	Yes
Event	27th International Symposium on Compound Semiconductors - Monterey, CA, United States Duration: Oct 2 2000 → Oct 5 2000

Other

Other	27th International Symposium on Compound Semiconductors
Country/Territory	United States
City	Monterey, CA
Period	10/2/00 → 10/5/00

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{32fa122a8274469ca07f13a9d26ac541,

title = "Molecular beam epitaxy of GaN/AlGaN multiple quantum wells: application to near-infrared intersubband transitions (1.5 - 4.2 μm)",

abstract = "High quality GaN/AlGaN multiple quantum wells were grown by molecular beam epitaxy on (0001) sapphire substrates. The GaN wells range in thickness between 10 and 30{\AA} while the AlGaN composition of the barriers was varied between 45 and 85%. Structural studies by cross-sectional transmission electron microscopy show that the GaN/AlGaN interfaces are abrupt with thickness uniformity on the order of one (Al)GaN monolayer. Intersubband absorption was observed between 1.5 to 4.2 μm depending on the well thickness and barrier height. This is the first observation of intersubband absorption at a wavelength as short as 1.5 μm for the III-nitrides material system.",

author = "Ng, {H. M.} and C. Gmachl and Chu, {S. N.G.} and Cho, {A. Y.}",

year = "2000",

language = "English (US)",

pages = "245--249",

note = "27th International Symposium on Compound Semiconductors ; Conference date: 02-10-2000 Through 05-10-2000",

}

TY - CONF

T1 - Molecular beam epitaxy of GaN/AlGaN multiple quantum wells

T2 - 27th International Symposium on Compound Semiconductors

AU - Ng, H. M.

AU - Gmachl, C.

AU - Chu, S. N.G.

AU - Cho, A. Y.

PY - 2000

Y1 - 2000

N2 - High quality GaN/AlGaN multiple quantum wells were grown by molecular beam epitaxy on (0001) sapphire substrates. The GaN wells range in thickness between 10 and 30Å while the AlGaN composition of the barriers was varied between 45 and 85%. Structural studies by cross-sectional transmission electron microscopy show that the GaN/AlGaN interfaces are abrupt with thickness uniformity on the order of one (Al)GaN monolayer. Intersubband absorption was observed between 1.5 to 4.2 μm depending on the well thickness and barrier height. This is the first observation of intersubband absorption at a wavelength as short as 1.5 μm for the III-nitrides material system.

AB - High quality GaN/AlGaN multiple quantum wells were grown by molecular beam epitaxy on (0001) sapphire substrates. The GaN wells range in thickness between 10 and 30Å while the AlGaN composition of the barriers was varied between 45 and 85%. Structural studies by cross-sectional transmission electron microscopy show that the GaN/AlGaN interfaces are abrupt with thickness uniformity on the order of one (Al)GaN monolayer. Intersubband absorption was observed between 1.5 to 4.2 μm depending on the well thickness and barrier height. This is the first observation of intersubband absorption at a wavelength as short as 1.5 μm for the III-nitrides material system.

UR - http://www.scopus.com/inward/record.url?scp=0034388262&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034388262&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034388262

SP - 245

EP - 249

Y2 - 2 October 2000 through 5 October 2000

ER -

Molecular beam epitaxy of GaN/AlGaN multiple quantum wells: application to near-infrared intersubband transitions (1.5 - 4.2 μm)

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