Abstract
We describe the growth and properties of (In0.5 Al0.5) 1-x Mnx As and (In0.5 Ga0.5) 1-x Mnx As epilayers and superlattices. We find that the structural quality of the epilayers is similar to that of the more extensively studied In1-x Mnx As and Ga1-x Mnx As magnetic semiconductors and that we can incorporate significantly larger amounts of Mn (∼12%) without phase segregation. Magnetization measurements indicate that the Curie temperatures of (In0.5 Ga0.5) 1-x Mnx As and (In0.5 Al0.5) 1-x Mnx As (x∼0.11) epilayers are 95 and 25 K, respectively. The Curie temperature of the (In0.5 Ga0.5) 1-x Mnx As (In0.5 Al0.5) 1-x Mnx As superlattices decreases with the increase of the Al (Al+Ga) ratio. We attribute this to a decreased overlap between the impurity band and the valence band because of an enhanced Mn acceptor activation energy.
Original language | English (US) |
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Pages (from-to) | 1304-1307 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 23 |
Issue number | 3 |
DOIs | |
State | Published - 2005 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering