Modulation of the high mobility two-dimensional electrons in SiSiGe using atomic-layer-deposited gate dielectric

  • K. Lai
  • , P. D. Ye
  • , W. Pan
  • , D. C. Tsui
  • , S. A. Lyon
  • , M. Mühlberger
  • , F. Schäffler

Research output: Contribution to journal › Article › peer-review

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