Modulation of the high mobility two-dimensional electrons in SiSiGe using atomic-layer-deposited gate dielectric

Keyphrases

• Two-dimensional Electrons 100%
• Gate Dielectric 100%
• High Mobility 100%
• Atomic Layer Deposited 100%
• Two-dimensional Electron Systems 66%
• Dielectric 66%
• Low Temperature 33%
• Carrier Density 33%
• Quantum Well 33%
• Magnetotransport 33%
• Heterostructure 33%
• Aluminum Oxide 33%
• MOSFET 33%
• Schottky Barrier 33%
• Strained Si 33%
• Plasma-enhanced Chemical Vapor Deposition (PECVD) 33%
• Gate Bias 33%
• Gate Leakage Current 33%

Material Science

• Dielectric Material 100%
• Heterojunction 25%
• Carrier Concentration 25%
• Quantum Well 25%
• Metal-Oxide-Semiconductor Field-Effect Transistor 25%
• Schottky Barrier 25%
• Plasma-Enhanced Chemical Vapor Deposition 25%