Modulation of the high mobility two-dimensional electrons in SiSiGe using atomic-layer-deposited gate dielectric

K. Lai; P. D. Ye; W. Pan; D. C. Tsui; S. A. Lyon; M. Mühlberger; F. Schäffler

doi:10.1063/1.2076439

Modulation of the high mobility two-dimensional electrons in SiSiGe using atomic-layer-deposited gate dielectric

K. Lai, P. D. Ye, W. Pan, D. C. Tsui, S. A. Lyon, M. Mühlberger, F. Schäffler

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Metal-oxide-semiconductor field-effect-transistors using atomic-layer-deposited (ALD) Al2 O3 as the gate dielectric are fabricated on the Si Si1-x Gex heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5× 1011 to 4.5× 1011 cm-2, virtually without any gate leakage current. Magnetotransport data show the homogeneous depletion of 2DES under gate biases. The characteristic of vertical modulation using ALD dielectric is shown to be better than that using Schottky barrier or the Si O2 dielectric formed by plasma-enhanced chemical-vapor-deposition.

Original language	English (US)
Article number	142103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	14
DOIs	https://doi.org/10.1063/1.2076439
State	Published - Oct 3 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2076439

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@article{e252aacca6b1418ea9b3c2f4ec0b8d4a,

title = "Modulation of the high mobility two-dimensional electrons in SiSiGe using atomic-layer-deposited gate dielectric",

abstract = "Metal-oxide-semiconductor field-effect-transistors using atomic-layer-deposited (ALD) Al2 O3 as the gate dielectric are fabricated on the Si Si1-x Gex heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5× 1011 to 4.5× 1011 cm-2, virtually without any gate leakage current. Magnetotransport data show the homogeneous depletion of 2DES under gate biases. The characteristic of vertical modulation using ALD dielectric is shown to be better than that using Schottky barrier or the Si O2 dielectric formed by plasma-enhanced chemical-vapor-deposition.",

author = "K. Lai and Ye, {P. D.} and W. Pan and Tsui, {D. C.} and Lyon, {S. A.} and M. M{\"u}hlberger and F. Sch{\"a}ffler",

note = "Funding Information: The authors thank J. J. Wang and G. D. Wilk for technical support on ALD growth, and K. Yao and X. Bo for PECVD Si O 2 growth. The work at Princeton University was supported by the AFOSR under Grant No. 0190GFB463 and the NSF under Grant No. DMR0352533. The part of the work carried out in Linz was supported by GMe and FWF under Grant No. P16223–N08. ",

year = "2005",

month = oct,

day = "3",

doi = "10.1063/1.2076439",

language = "English (US)",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Modulation of the high mobility two-dimensional electrons in SiSiGe using atomic-layer-deposited gate dielectric

AU - Lai, K.

AU - Ye, P. D.

AU - Pan, W.

AU - Tsui, D. C.

AU - Lyon, S. A.

AU - Mühlberger, M.

AU - Schäffler, F.

N1 - Funding Information: The authors thank J. J. Wang and G. D. Wilk for technical support on ALD growth, and K. Yao and X. Bo for PECVD Si O 2 growth. The work at Princeton University was supported by the AFOSR under Grant No. 0190GFB463 and the NSF under Grant No. DMR0352533. The part of the work carried out in Linz was supported by GMe and FWF under Grant No. P16223–N08.

PY - 2005/10/3

Y1 - 2005/10/3

N2 - Metal-oxide-semiconductor field-effect-transistors using atomic-layer-deposited (ALD) Al2 O3 as the gate dielectric are fabricated on the Si Si1-x Gex heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5× 1011 to 4.5× 1011 cm-2, virtually without any gate leakage current. Magnetotransport data show the homogeneous depletion of 2DES under gate biases. The characteristic of vertical modulation using ALD dielectric is shown to be better than that using Schottky barrier or the Si O2 dielectric formed by plasma-enhanced chemical-vapor-deposition.

AB - Metal-oxide-semiconductor field-effect-transistors using atomic-layer-deposited (ALD) Al2 O3 as the gate dielectric are fabricated on the Si Si1-x Gex heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5× 1011 to 4.5× 1011 cm-2, virtually without any gate leakage current. Magnetotransport data show the homogeneous depletion of 2DES under gate biases. The characteristic of vertical modulation using ALD dielectric is shown to be better than that using Schottky barrier or the Si O2 dielectric formed by plasma-enhanced chemical-vapor-deposition.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142103

ER -

Modulation of the high mobility two-dimensional electrons in SiSiGe using atomic-layer-deposited gate dielectric

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