Modification of organic interfaces: From molecular level measurements to injection characteristics

I. G. Hill; D. Milliron; J. Schwartz; A. Kahn

doi:10.1117/12.372720

Modification of organic interfaces: From molecular level measurements to injection characteristics

I. G. Hill, D. Milliron, J. Schwartz, A. Kahn

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Ultra-violet and X-ray photoemission spectroscopy and current-voltage measurements were used to investigate the fundamental mechanisms responsible for the improvement of hole injection between modified indium-tin-oxide (ITO) surfaces and the hole-transport layer (HTL) of an organic light emitting diode. Two ITO surface modification techniques were investigated: oxygen-plasma treatment and deposition of an ultra-thin organic interlayer between the ITO and the HTL. We demonstrate that the improvement in injection is due to an increase in surface work function of ITO mediated by the presence of an oxygen radical in the first case, and to the presence of an intermediate energy level between the ITO Fermi level and the HTL highest occupied molecular orbital in the second.

Original language	English (US)
Pages (from-to)	276-282
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3797
DOIs	https://doi.org/10.1117/12.372720
State	Published - 1999
Event	Proceedings of the 1999 Organic Light-Emitting Materials and Devices III - Denver, CO, USA Duration: Jul 19 1999 → Jul 21 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.372720

Cite this

@article{2d66f23495ce48f888548a5a771a969d,

title = "Modification of organic interfaces: From molecular level measurements to injection characteristics",

abstract = "Ultra-violet and X-ray photoemission spectroscopy and current-voltage measurements were used to investigate the fundamental mechanisms responsible for the improvement of hole injection between modified indium-tin-oxide (ITO) surfaces and the hole-transport layer (HTL) of an organic light emitting diode. Two ITO surface modification techniques were investigated: oxygen-plasma treatment and deposition of an ultra-thin organic interlayer between the ITO and the HTL. We demonstrate that the improvement in injection is due to an increase in surface work function of ITO mediated by the presence of an oxygen radical in the first case, and to the presence of an intermediate energy level between the ITO Fermi level and the HTL highest occupied molecular orbital in the second.",

author = "Hill, {I. G.} and D. Milliron and J. Schwartz and A. Kahn",

year = "1999",

doi = "10.1117/12.372720",

language = "English (US)",

volume = "3797",

pages = "276--282",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Organic Light-Emitting Materials and Devices III ; Conference date: 19-07-1999 Through 21-07-1999",

}

TY - JOUR

T1 - Modification of organic interfaces

T2 - Proceedings of the 1999 Organic Light-Emitting Materials and Devices III

AU - Hill, I. G.

AU - Milliron, D.

AU - Schwartz, J.

AU - Kahn, A.

PY - 1999

Y1 - 1999

N2 - Ultra-violet and X-ray photoemission spectroscopy and current-voltage measurements were used to investigate the fundamental mechanisms responsible for the improvement of hole injection between modified indium-tin-oxide (ITO) surfaces and the hole-transport layer (HTL) of an organic light emitting diode. Two ITO surface modification techniques were investigated: oxygen-plasma treatment and deposition of an ultra-thin organic interlayer between the ITO and the HTL. We demonstrate that the improvement in injection is due to an increase in surface work function of ITO mediated by the presence of an oxygen radical in the first case, and to the presence of an intermediate energy level between the ITO Fermi level and the HTL highest occupied molecular orbital in the second.

AB - Ultra-violet and X-ray photoemission spectroscopy and current-voltage measurements were used to investigate the fundamental mechanisms responsible for the improvement of hole injection between modified indium-tin-oxide (ITO) surfaces and the hole-transport layer (HTL) of an organic light emitting diode. Two ITO surface modification techniques were investigated: oxygen-plasma treatment and deposition of an ultra-thin organic interlayer between the ITO and the HTL. We demonstrate that the improvement in injection is due to an increase in surface work function of ITO mediated by the presence of an oxygen radical in the first case, and to the presence of an intermediate energy level between the ITO Fermi level and the HTL highest occupied molecular orbital in the second.

UR - http://www.scopus.com/inward/record.url?scp=0033340188&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033340188&partnerID=8YFLogxK

U2 - 10.1117/12.372720

DO - 10.1117/12.372720

M3 - Conference article

AN - SCOPUS:0033340188

SN - 0277-786X

VL - 3797

SP - 276

EP - 282

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

Y2 - 19 July 1999 through 21 July 1999

ER -

Modification of organic interfaces: From molecular level measurements to injection characteristics

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this