Modelling vacuum ultraviolet photon penetration depth and C=O bond depletion in 193 nm photoresist

Monica J. Titus, Dustin G. Nest, David B. Graves

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Vacuum ultraviolet (VUV) photons are known to modify the bulk chemical composition of 193 nm photoresist, typically penetrating ∼100 nm and depleting carbon-oxygen bonds. Fourier transform infrared transmission measurements as a function of VUV photon fluence demonstrate that VUV-induced bond breaking occurs over a period of time. We present a model based on the idea that VUV photons initially deplete near-surface O-containing bonds, leading to deeper, subsequent penetration and more bond losses, until the remaining near-surface C-C bonds are able to absorb the incident radiation. Fitted model photoabsorption cross-sections compare well with the literature values.

Original languageEnglish (US)
Article number152001
JournalJournal of Physics D: Applied Physics
Volume42
Issue number15
DOIs
StatePublished - 2009
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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