Modelling of reactors for plasma processing I. Silicon etching by CF4 in a radial flow reactor

Manoj Dalvie, Klavs F. Jensen, David B. Graves

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


Modelling of glow discharge (plasma) processes is illustrated by the formulation of a reaction engineering model for a radial flow, parallel plate plasma reactor. Features of the discharge structure are described along with a brief discussion of the modelling necessary to predict ion concentrations, electron density and energy. In the present case, electron density and energy are included as parameters in the reactor continuity balances. The industrially important etching of silicon in CF4 is used as an example. The modeling equations are solved by finite element methods and the model predictions are used to demonstrate the influence of operating parameters on etch rate magnitude and uniformity.

Original languageEnglish (US)
Pages (from-to)653-660
Number of pages8
JournalChemical Engineering Science
Issue number4
StatePublished - 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Chemical Engineering
  • Industrial and Manufacturing Engineering


  • Reactor modelling
  • finite elements.
  • plasma processing
  • silicon etching


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