Modeling of leakage current distributions in series connected polysilicon thin film transistors

E. Cheng, J. C. Sturm, I. W. Wu, T. J. King

Research output: Contribution to conferencePaper

Abstract

Leakage current is an important parameter in thin film transistors (TFTs) for achieving gray scales in Active Matrix Liquid Crystal Displays (AMLCDs). Leakage regulation is especially important in polysilicon (Poly-Si) TFTs, where the leakage is significantly greater than in their amorphous silicon counterparts. To reduce the leakage current, it is a common practice to place two poly-Si TFTs in series which may reduce the leakage current by over an order of magnitude. This work shows how leakage current in a series connected pair can be analytically predicted from the I-V characteristics of a single FET for the first time, and how the leakage current distribution of single transistors may affect the distribution of the series connected devices. These implications are important for estimating the pixel yield in AMLCDs from single device characteristics.

Original languageEnglish (US)
Pages107-110
Number of pages4
StatePublished - Dec 1 1995
EventProceedings of the 1995 2nd International Workshop on Active Liquid Crystal Displays, AMLCDs - Bethlehem, PA, USA
Duration: Sep 25 1995Sep 26 1995

Other

OtherProceedings of the 1995 2nd International Workshop on Active Liquid Crystal Displays, AMLCDs
CityBethlehem, PA, USA
Period9/25/959/26/95

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Cheng, E., Sturm, J. C., Wu, I. W., & King, T. J. (1995). Modeling of leakage current distributions in series connected polysilicon thin film transistors. 107-110. Paper presented at Proceedings of the 1995 2nd International Workshop on Active Liquid Crystal Displays, AMLCDs, Bethlehem, PA, USA, .