Abstract
Leakage current is an important parameter in thin film transistors (TFTs) for achieving gray scales in Active Matrix Liquid Crystal Displays (AMLCDs). Leakage regulation is especially important in polysilicon (Poly-Si) TFTs, where the leakage is significantly greater than in their amorphous silicon counterparts. To reduce the leakage current, it is a common practice to place two poly-Si TFTs in series which may reduce the leakage current by over an order of magnitude. This work shows how leakage current in a series connected pair can be analytically predicted from the I-V characteristics of a single FET for the first time, and how the leakage current distribution of single transistors may affect the distribution of the series connected devices. These implications are important for estimating the pixel yield in AMLCDs from single device characteristics.
Original language | English (US) |
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Pages | 107-110 |
Number of pages | 4 |
State | Published - 1995 |
Event | Proceedings of the 1995 2nd International Workshop on Active Liquid Crystal Displays, AMLCDs - Bethlehem, PA, USA Duration: Sep 25 1995 → Sep 26 1995 |
Other
Other | Proceedings of the 1995 2nd International Workshop on Active Liquid Crystal Displays, AMLCDs |
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City | Bethlehem, PA, USA |
Period | 9/25/95 → 9/26/95 |
All Science Journal Classification (ASJC) codes
- General Engineering