Modeling of gas phase and surface reactions in an aluminum nitride growth system

D. Cai; L. L. Zheng; H. Zhang; V. L. Tassev; D. F. Bliss

doi:10.1016/j.jcrysgro.2006.04.093

Modeling of gas phase and surface reactions in an aluminum nitride growth system

D. Cai
, L. L. Zheng
, H. Zhang
, V. L. Tassev
, D. F. Bliss

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This paper presents systematic study of an improved vapor-phase expitaxy system-a halide vapor transport epitaxy (HVTE) system [D.F. Bliss, V.L. Tassev, D. Weyburne, J.S. Bailey, J. Crystal Growth 250 (2003) 1]. A numerical model has been developed, which is capable of describing multi-component fluid flow, gas/surface chemistry, conjugate heat transfer, and species transport, and it has been applied to the HVTE system for optimal design. The investigation has been conducted to study the effects of the gas-phase reactions, the reactor wall deposition, the adduct boat and the three-zone furnace temperature, the carrier gas flow rate and the distance between the adduct boat and the substrate on the aluminum nitride deposition rate/deposition uniformity.

Original language	English (US)
Pages (from-to)	136-145
Number of pages	10
Journal	Journal of Crystal Growth
Volume	293
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.04.093
State	Published - Jul 15 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A1. Computer simulation
A1. Gas-phase reaction
A1. Halide vapor transport epitaxy reactor
A3. Chemical vapor deposition process
B2. Semiconducting aluminum nitride

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10.1016/j.jcrysgro.2006.04.093

Cite this

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title = "Modeling of gas phase and surface reactions in an aluminum nitride growth system",

abstract = "This paper presents systematic study of an improved vapor-phase expitaxy system-a halide vapor transport epitaxy (HVTE) system [D.F. Bliss, V.L. Tassev, D. Weyburne, J.S. Bailey, J. Crystal Growth 250 (2003) 1]. A numerical model has been developed, which is capable of describing multi-component fluid flow, gas/surface chemistry, conjugate heat transfer, and species transport, and it has been applied to the HVTE system for optimal design. The investigation has been conducted to study the effects of the gas-phase reactions, the reactor wall deposition, the adduct boat and the three-zone furnace temperature, the carrier gas flow rate and the distance between the adduct boat and the substrate on the aluminum nitride deposition rate/deposition uniformity.",

keywords = "A1. Computer simulation, A1. Gas-phase reaction, A1. Halide vapor transport epitaxy reactor, A3. Chemical vapor deposition process, B2. Semiconducting aluminum nitride",

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T1 - Modeling of gas phase and surface reactions in an aluminum nitride growth system

AU - Cai, D.

AU - Zheng, L. L.

AU - Zhang, H.

AU - Tassev, V. L.

AU - Bliss, D. F.

PY - 2006/7/15

Y1 - 2006/7/15

N2 - This paper presents systematic study of an improved vapor-phase expitaxy system-a halide vapor transport epitaxy (HVTE) system [D.F. Bliss, V.L. Tassev, D. Weyburne, J.S. Bailey, J. Crystal Growth 250 (2003) 1]. A numerical model has been developed, which is capable of describing multi-component fluid flow, gas/surface chemistry, conjugate heat transfer, and species transport, and it has been applied to the HVTE system for optimal design. The investigation has been conducted to study the effects of the gas-phase reactions, the reactor wall deposition, the adduct boat and the three-zone furnace temperature, the carrier gas flow rate and the distance between the adduct boat and the substrate on the aluminum nitride deposition rate/deposition uniformity.

AB - This paper presents systematic study of an improved vapor-phase expitaxy system-a halide vapor transport epitaxy (HVTE) system [D.F. Bliss, V.L. Tassev, D. Weyburne, J.S. Bailey, J. Crystal Growth 250 (2003) 1]. A numerical model has been developed, which is capable of describing multi-component fluid flow, gas/surface chemistry, conjugate heat transfer, and species transport, and it has been applied to the HVTE system for optimal design. The investigation has been conducted to study the effects of the gas-phase reactions, the reactor wall deposition, the adduct boat and the three-zone furnace temperature, the carrier gas flow rate and the distance between the adduct boat and the substrate on the aluminum nitride deposition rate/deposition uniformity.

KW - A1. Computer simulation

KW - A1. Gas-phase reaction

KW - A1. Halide vapor transport epitaxy reactor

KW - A3. Chemical vapor deposition process

KW - B2. Semiconducting aluminum nitride

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JO - Journal of Crystal Growth

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Modeling of gas phase and surface reactions in an aluminum nitride growth system

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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