TY - GEN
T1 - Modeling Efficiency of InAs-Based Near-Field Thermophotovoltaic Devices
AU - Forcade, Gavin P.
AU - Valdivia, Christopher E.
AU - Lu, Shengyuan
AU - Molesky, Sean
AU - Rodriguez, Alejandro W.
AU - Krich, Jacob J.
AU - St-Gelais, Raphael
AU - Hinzer, Karin
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/9/13
Y1 - 2021/9/13
N2 - Enormous potential lies in waste-heat recycling for the world's industrial sector. Portable solid-state modules are a universal low-maintenance method to recycle this waste-heat. One such technology, near-field thermophotovoltaics (NFTPV), relies on a heat source in extreme proximity (<200 nm) to a photovoltaic cell, which then generates electricity. We developed an optoelectronic model where electron-hole pair generation rates are calculated using fluctuation electrodynamics, which we input into an electrical model based in Synopsys TCAD Sentaurus. Using our optoelectronic model, we optimized a novel InAs-based NFTPV device for a 700 K radiator 100 nm away from the PV cell with an efficiency reaching ~17%, more than an order of magnitude higher than current NFTPV device efficiencies.
AB - Enormous potential lies in waste-heat recycling for the world's industrial sector. Portable solid-state modules are a universal low-maintenance method to recycle this waste-heat. One such technology, near-field thermophotovoltaics (NFTPV), relies on a heat source in extreme proximity (<200 nm) to a photovoltaic cell, which then generates electricity. We developed an optoelectronic model where electron-hole pair generation rates are calculated using fluctuation electrodynamics, which we input into an electrical model based in Synopsys TCAD Sentaurus. Using our optoelectronic model, we optimized a novel InAs-based NFTPV device for a 700 K radiator 100 nm away from the PV cell with an efficiency reaching ~17%, more than an order of magnitude higher than current NFTPV device efficiencies.
UR - http://www.scopus.com/inward/record.url?scp=85116312640&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85116312640&partnerID=8YFLogxK
U2 - 10.1109/NUSOD52207.2021.9541515
DO - 10.1109/NUSOD52207.2021.9541515
M3 - Conference contribution
AN - SCOPUS:85116312640
T3 - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
SP - 53
EP - 54
BT - 2021 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2021
PB - IEEE Computer Society
T2 - 2021 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2021
Y2 - 13 September 2021 through 17 September 2021
ER -