Abstract
We propose a new kinetic model for surface segregation during vapor phase growth that takes into account multiple mechanisms for segregation, including mechanisms for inter-layer exchange and surface diffusion. The resulting behavior of the segregation length shows temperature and velocity dependence, both of which have been observed in experiments. We compare our analytic model to experimental measurements for segregation of Phosphorus in Si(001), and we find an excellent agreement using realistic energies and pre-exponential factors for kinetic rate constants.
| Original language | English (US) |
|---|---|
| Pages (from-to) | P3111-P3117 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 648 |
| State | Published - 2001 |
| Externally published | Yes |
| Event | Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Strutures - Boston, MA, United States Duration: Nov 27 2000 → Dec 1 2000 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering