Model for dopant and impurity segregation during vapor phase growth

Craig B. Arnold, Michael J. Aziz

Research output: Contribution to journalConference articlepeer-review

Abstract

We propose a new kinetic model for surface segregation during vapor phase growth that takes into account multiple mechanisms for segregation, including mechanisms for inter-layer exchange and surface diffusion. The resulting behavior of the segregation length shows temperature and velocity dependence, both of which have been observed in experiments. We compare our analytic model to experimental measurements for segregation of Phosphorus in Si(001), and we find an excellent agreement using realistic energies and pre-exponential factors for kinetic rate constants.

Original languageEnglish (US)
Pages (from-to)P3111-P3117
JournalMaterials Research Society Symposium - Proceedings
Volume648
StatePublished - Dec 1 2001
Externally publishedYes
EventGrowth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Strutures - Boston, MA, United States
Duration: Nov 27 2000Dec 1 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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