Abstract
We have computed the electronic band structure for a model of the 2 × 1-reconstructed (111) surface of Si, based on 2 two-dimensional net of dangling bonds. A pairing of surface atoms is assumed, involving a displacement and a tilting of the dangling bonds towards each other. The energy gap that separates the two bands of surface states obtained increases with the degree of reconstruction, which is taken as a parameter. Experimental data, particularly surface optical absorption, find a satisfactory explanation in terms of this calculation, which indicates in Si (111) 2 × 1 a shift of the surface atoms by about 8% of their ideal distance.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 387-390 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 17 |
| Issue number | 3 |
| DOIs | |
| State | Published - Aug 1 1975 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
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Selloni, A., & Tosatti, E. (1975). Model band structure of reconstructed (111) 2 × 1 surface of silicon. Solid State Communications, 17(3), 387-390. https://doi.org/10.1016/0038-1098(75)90317-8