Abstract
We have computed the electronic band structure for a model of the 2 × 1-reconstructed (111) surface of Si, based on 2 two-dimensional net of dangling bonds. A pairing of surface atoms is assumed, involving a displacement and a tilting of the dangling bonds towards each other. The energy gap that separates the two bands of surface states obtained increases with the degree of reconstruction, which is taken as a parameter. Experimental data, particularly surface optical absorption, find a satisfactory explanation in terms of this calculation, which indicates in Si (111) 2 × 1 a shift of the surface atoms by about 8% of their ideal distance.
Original language | English (US) |
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Pages (from-to) | 387-390 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 17 |
Issue number | 3 |
DOIs | |
State | Published - Aug 1 1975 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry