MOCVD synthesis of compositionally tuned topological insulator nanowires

Loren D. Alegria, Nan Yao, Jason R. Petta

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub-micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi-, Se-, and Te-bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi2Se3 to Bi2Te3, including the ternary compound Bi2Te2Se. These high quality nanostructured TI compounds are suitable platforms for on-going searches for Majorana fermions.

Original languageEnglish (US)
Pages (from-to)991-996
Number of pages6
JournalPhysica Status Solidi - Rapid Research Letters
Volume8
Issue number12
DOIs
StatePublished - Dec 1 2014

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Keywords

  • Bismuth selenides
  • Bismuth tellurides
  • Metalorganic chemical vapor deposition
  • Nanowires
  • Topological insulators

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