MOCVD synthesis of compositionally tuned topological insulator nanowires

Loren D. Alegria; Nan Yao; Jason R. Petta

doi:10.1002/pssr.201409428

MOCVD synthesis of compositionally tuned topological insulator nanowires

Loren D. Alegria, Nan Yao, Jason R. Petta

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub-micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi-, Se-, and Te-bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi₂Se₃ to Bi₂Te₃, including the ternary compound Bi₂Te₂Se. These high quality nanostructured TI compounds are suitable platforms for on-going searches for Majorana fermions.

Original language	English (US)
Pages (from-to)	991-996
Number of pages	6
Journal	Physica Status Solidi - Rapid Research Letters
Volume	8
Issue number	12
DOIs	https://doi.org/10.1002/pssr.201409428
State	Published - Dec 1 2014

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

Keywords

Bismuth selenides
Bismuth tellurides
Metalorganic chemical vapor deposition
Nanowires
Topological insulators

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10.1002/pssr.201409428

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title = "MOCVD synthesis of compositionally tuned topological insulator nanowires",

abstract = "Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub-micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi-, Se-, and Te-bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi2Se3 to Bi2Te3, including the ternary compound Bi2Te2Se. These high quality nanostructured TI compounds are suitable platforms for on-going searches for Majorana fermions.",

keywords = "Bismuth selenides, Bismuth tellurides, Metalorganic chemical vapor deposition, Nanowires, Topological insulators",

author = "Alegria, {Loren D.} and Nan Yao and Petta, {Jason R.}",

note = "Publisher Copyright: {\textcopyright} 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

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doi = "10.1002/pssr.201409428",

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T1 - MOCVD synthesis of compositionally tuned topological insulator nanowires

AU - Alegria, Loren D.

AU - Yao, Nan

AU - Petta, Jason R.

PY - 2014/12/1

Y1 - 2014/12/1

N2 - Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub-micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi-, Se-, and Te-bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi2Se3 to Bi2Te3, including the ternary compound Bi2Te2Se. These high quality nanostructured TI compounds are suitable platforms for on-going searches for Majorana fermions.

AB - Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub-micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi-, Se-, and Te-bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi2Se3 to Bi2Te3, including the ternary compound Bi2Te2Se. These high quality nanostructured TI compounds are suitable platforms for on-going searches for Majorana fermions.

KW - Bismuth selenides

KW - Bismuth tellurides

KW - Metalorganic chemical vapor deposition

KW - Nanowires

KW - Topological insulators

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M3 - Article

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EP - 996

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

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ER -

MOCVD synthesis of compositionally tuned topological insulator nanowires

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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