MOCVD growth and regrowth of quantum cascade lasers

Fow Sen Choa, Liwei Cheng, Xiaoming Ji, Zhijun Liu, Daniel Wasserman, Scott S. Howard, Claire F. Gmachl, Xiaojun Wang, Jenyu Fan, Jacob Khurgin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

MOCVD grown quantum cascade lasers (QCLs) have demonstrated about the same level performance as MBE grown QCLs. With the regrowth capability to fabricate buried heterostructure (BH) waveguides, the QCL output power has been dramatically increased and that opens the door to many mid-IR (and THz) applications. With the stable and high growth rate to produce high performance and reliable BH lasers, commercialization of QCLs with reasonable qualification and affordable price becomes possible. Furthermore with a good gain material and the etching and regrowth capability, optoelectronic integration can be realized using MOCVD growth techniques. We compare the MBE and MOCVD growth techniques and discuss important issues on growth rate stabilization and the control of growth quality at the hetero-interface. We also go over a few growth and integration examples we are working on, which are preferentially done by MOCVD. Finally we describe a detailed QCL BH regrowth study and discussed how to obtain optimized current-blocking regrowths.

Original languageEnglish (US)
Title of host publicationNovel In-Plane Semiconductor Lasers VI
DOIs
StatePublished - May 24 2007
EventNovel In-Plane Semiconductor Lasers VI - San Jose, CA, United States
Duration: Jan 22 2007Jan 25 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6485
ISSN (Print)0277-786X

Other

OtherNovel In-Plane Semiconductor Lasers VI
CountryUnited States
CitySan Jose, CA
Period1/22/071/25/07

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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