Mobility of positrons in silicon

Allen P. Mills; Loren Pfeiffer

doi:10.1016/0375-9601(77)90220-1

Mobility of positrons in silicon

Allen P. Mills, Loren Pfeiffer

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Abstract

The drift velocity v₊ of positrons in Si has been measured by observing the Doppler shift of the annihilation γ's. The electric field dependence of v₊ yields the positron mobility μ₊: at 80 K μ₊=460±20 cm²V^-1 sec^-1 and at 184 K μ₊=173±15 cm²V^-1 sec^-1.

Original language	English (US)
Pages (from-to)	118-120
Number of pages	3
Journal	Physics Letters A
Volume	63
Issue number	2
DOIs	https://doi.org/10.1016/0375-9601(77)90220-1
State	Published - Oct 31 1977
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1016/0375-9601(77)90220-1

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@article{6a07f6602d4643edb2b47efb0c784104,

title = "Mobility of positrons in silicon",

abstract = "The drift velocity v+ of positrons in Si has been measured by observing the Doppler shift of the annihilation γ's. The electric field dependence of v+ yields the positron mobility μ+: at 80 K μ+=460±20 cm2V-1 sec-1 and at 184 K μ+=173±15 cm2V-1 sec-1.",

author = "Mills, {Allen P.} and Loren Pfeiffer",

year = "1977",

month = oct,

day = "31",

doi = "10.1016/0375-9601(77)90220-1",

language = "English (US)",

volume = "63",

pages = "118--120",

journal = "Physics Letters A",

issn = "0375-9601",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Mobility of positrons in silicon

AU - Mills, Allen P.

AU - Pfeiffer, Loren

PY - 1977/10/31

Y1 - 1977/10/31

N2 - The drift velocity v+ of positrons in Si has been measured by observing the Doppler shift of the annihilation γ's. The electric field dependence of v+ yields the positron mobility μ+: at 80 K μ+=460±20 cm2V-1 sec-1 and at 184 K μ+=173±15 cm2V-1 sec-1.

AB - The drift velocity v+ of positrons in Si has been measured by observing the Doppler shift of the annihilation γ's. The electric field dependence of v+ yields the positron mobility μ+: at 80 K μ+=460±20 cm2V-1 sec-1 and at 184 K μ+=173±15 cm2V-1 sec-1.

UR - http://www.scopus.com/inward/record.url?scp=25344474485&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=25344474485&partnerID=8YFLogxK

U2 - 10.1016/0375-9601(77)90220-1

DO - 10.1016/0375-9601(77)90220-1

M3 - Article

AN - SCOPUS:25344474485

SN - 0375-9601

VL - 63

SP - 118

EP - 120

JO - Physics Letters A

JF - Physics Letters A

IS - 2

ER -

Mobility of positrons in silicon

Abstract

All Science Journal Classification (ASJC) codes

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