Mobility of positrons in silicon

Allen P. Mills, Loren Pfeiffer

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

The drift velocity v+ of positrons in Si has been measured by observing the Doppler shift of the annihilation γ's. The electric field dependence of v+ yields the positron mobility μ+: at 80 K μ+=460±20 cm2V-1 sec-1 and at 184 K μ+=173±15 cm2V-1 sec-1.

Original languageEnglish (US)
Pages (from-to)118-120
Number of pages3
JournalPhysics Letters A
Volume63
Issue number2
DOIs
StatePublished - Oct 31 1977
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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