Mobility anisotropy of two-dimensional hole systems in (311)A GaAs/Al xGa1-xAs heterojunctions

J. J. Heremans, M. B. Santos, K. Hirakawa, Mansour Shayegan

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Abstract

We have measured the low-temperature mobility of high-quality two-dimensional hole systems confined at the (311)A GaAs/AlxGa 1-xAs interface. Variables were the thickness of the spacer layer separating the carriers from the Si dopants, and the carrier sheet density. A large anisotropy in mobility is found between the [2̄33] and [011̄] directions. While the high mobility [2̄33] direction yields results analogous to the two-dimensional electron case, we conclude that transport along [011̄] is almost entirely determined by anisotropic interface roughness scattering.

Original languageEnglish (US)
Pages (from-to)1980-1982
Number of pages3
JournalJournal of Applied Physics
Volume76
Issue number3
DOIs
StatePublished - Dec 1 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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