Abstract
We have measured the low-temperature mobility of high-quality two-dimensional hole systems confined at the (311)A GaAs/AlxGa 1-xAs interface. Variables were the thickness of the spacer layer separating the carriers from the Si dopants, and the carrier sheet density. A large anisotropy in mobility is found between the [2̄33] and [011̄] directions. While the high mobility [2̄33] direction yields results analogous to the two-dimensional electron case, we conclude that transport along [011̄] is almost entirely determined by anisotropic interface roughness scattering.
Original language | English (US) |
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Pages (from-to) | 1980-1982 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 76 |
Issue number | 3 |
DOIs | |
State | Published - 1994 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)