Minority-carrier properties of thin epitaxial silicon films fabricated by limited reaction processing

J. C. Sturm; C. M. Gronet; J. F. Gibbons

doi:10.1063/1.336679

Minority-carrier properties of thin epitaxial silicon films fabricated by limited reaction processing

J. C. Sturm, C. M. Gronet, J. F. Gibbons

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Generation lifetimes and diode properties have been measured in epitaxial silicon films grown by limited reaction processing. Generation lifetimes from 1.4 to 94 μs were measured by observing the recovery of MOS capacitors from deep depletion. Planar diodes fabricated in both n- and p-type epitaxial films show excellent behavior in both forward and reverse bias. p-n junctions formed by growing p-type epitaxial silicon directly on an n-type substrate show no evidence of excessive interface defects or traps.

Original language	English (US)
Pages (from-to)	4180-4182
Number of pages	3
Journal	Journal of Applied Physics
Volume	59
Issue number	12
DOIs	https://doi.org/10.1063/1.336679
State	Published - 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.336679

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title = "Minority-carrier properties of thin epitaxial silicon films fabricated by limited reaction processing",

abstract = "Generation lifetimes and diode properties have been measured in epitaxial silicon films grown by limited reaction processing. Generation lifetimes from 1.4 to 94 μs were measured by observing the recovery of MOS capacitors from deep depletion. Planar diodes fabricated in both n- and p-type epitaxial films show excellent behavior in both forward and reverse bias. p-n junctions formed by growing p-type epitaxial silicon directly on an n-type substrate show no evidence of excessive interface defects or traps.",

author = "Sturm, {J. C.} and Gronet, {C. M.} and Gibbons, {J. F.}",

year = "1986",

doi = "10.1063/1.336679",

language = "English (US)",

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pages = "4180--4182",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Minority-carrier properties of thin epitaxial silicon films fabricated by limited reaction processing

AU - Sturm, J. C.

AU - Gronet, C. M.

AU - Gibbons, J. F.

PY - 1986

Y1 - 1986

N2 - Generation lifetimes and diode properties have been measured in epitaxial silicon films grown by limited reaction processing. Generation lifetimes from 1.4 to 94 μs were measured by observing the recovery of MOS capacitors from deep depletion. Planar diodes fabricated in both n- and p-type epitaxial films show excellent behavior in both forward and reverse bias. p-n junctions formed by growing p-type epitaxial silicon directly on an n-type substrate show no evidence of excessive interface defects or traps.

AB - Generation lifetimes and diode properties have been measured in epitaxial silicon films grown by limited reaction processing. Generation lifetimes from 1.4 to 94 μs were measured by observing the recovery of MOS capacitors from deep depletion. Planar diodes fabricated in both n- and p-type epitaxial films show excellent behavior in both forward and reverse bias. p-n junctions formed by growing p-type epitaxial silicon directly on an n-type substrate show no evidence of excessive interface defects or traps.

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IS - 12

ER -

Minority-carrier properties of thin epitaxial silicon films fabricated by limited reaction processing

Abstract

All Science Journal Classification (ASJC) codes

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