Minority-carrier properties of thin epitaxial silicon films fabricated by limited reaction processing

J. C. Sturm, C. M. Gronet, J. F. Gibbons

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

Generation lifetimes and diode properties have been measured in epitaxial silicon films grown by limited reaction processing. Generation lifetimes from 1.4 to 94 μs were measured by observing the recovery of MOS capacitors from deep depletion. Planar diodes fabricated in both n- and p-type epitaxial films show excellent behavior in both forward and reverse bias. p-n junctions formed by growing p-type epitaxial silicon directly on an n-type substrate show no evidence of excessive interface defects or traps.

Original languageEnglish (US)
Pages (from-to)4180-4182
Number of pages3
JournalJournal of Applied Physics
Volume59
Issue number12
DOIs
StatePublished - Dec 1 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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