Generation lifetimes and diode properties have been measured in epitaxial silicon films grown by limited reaction processing. Generation lifetimes from 1.4 to 94 μs were measured by observing the recovery of MOS capacitors from deep depletion. Planar diodes fabricated in both n- and p-type epitaxial films show excellent behavior in both forward and reverse bias. p-n junctions formed by growing p-type epitaxial silicon directly on an n-type substrate show no evidence of excessive interface defects or traps.
|Original language||English (US)|
|Number of pages||3|
|Journal||Journal of Applied Physics|
|State||Published - 1986|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)