Abstract
Two Al1-xIn2As/Ga1-yInyAs structures, with 5 SL/injector stages were grown by MBE on s.i.-InP substrate. X-ray and Raman characterization gives x = 0.49, y = 0.55. Electroluminescence spectra from 200 μm-diameter mesas were measured with an FTIR spectrometer with step can and lock-in acquisition.
Original language | English (US) |
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Pages | 267-268 |
Number of pages | 2 |
DOIs | |
State | Published - 2000 |
Externally published | Yes |
Event | Conference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA Duration: May 7 2000 → May 12 2000 |
Other
Other | Conference on Lasers and Electro-Optics (CLEO 2000) |
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City | San Francisco, CA, USA |
Period | 5/7/00 → 5/12/00 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering