Miniband electronic distribution in superlattice quantum cascade structures

M. Troccoli, M. T. Pellegrini, V. Spagnolo, G. Scamarcio, M. Striccoli, A. Tredicucci, C. Gmachl, F. Capasso, D. L. Sivco

Research output: Contribution to conferencePaper

Abstract

Two Al1-xIn2As/Ga1-yInyAs structures, with 5 SL/injector stages were grown by MBE on s.i.-InP substrate. X-ray and Raman characterization gives x = 0.49, y = 0.55. Electroluminescence spectra from 200 μm-diameter mesas were measured with an FTIR spectrometer with step can and lock-in acquisition.

Original languageEnglish (US)
Pages267-268
Number of pages2
DOIs
StatePublished - 2000
Externally publishedYes
EventConference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA
Duration: May 7 2000May 12 2000

Other

OtherConference on Lasers and Electro-Optics (CLEO 2000)
CitySan Francisco, CA, USA
Period5/7/005/12/00

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Troccoli, M., Pellegrini, M. T., Spagnolo, V., Scamarcio, G., Striccoli, M., Tredicucci, A., Gmachl, C., Capasso, F., & Sivco, D. L. (2000). Miniband electronic distribution in superlattice quantum cascade structures. 267-268. Paper presented at Conference on Lasers and Electro-Optics (CLEO 2000), San Francisco, CA, USA, . https://doi.org/10.1109/cleo.2000.906997