Abstract
The midinfrared emission from electroluminescent devices with quantum cascade (QC) active regions based on InGsAs/InP heterostructures was studied. The realization of InP-based QC lasers with aluminum-free waveguides was also discussed. A highly doped (n=10 18 cm -3) GaInAs contact layer was grown on top of an active core. A fourier transform infrared (FTIR) spectrometer equipped with a liquid N 2 cooled HgCdTe detector was used for the spectral measurements.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 7101-7104 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 94 |
| Issue number | 11 |
| DOIs | |
| State | Published - Dec 1 2003 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy
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