Midinfrared electroluminescence in quantum cascade structures with InP/InGaAs active regions

Mariano Troccoli, Federico Capasso, Jianxin Chen, Milton L. Peabody, Claire Gmachl, Deborah L. Sivco, Cheng Hsuan Chen, Alfred Y. Cho

Research output: Contribution to journalArticle

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Abstract

The midinfrared emission from electroluminescent devices with quantum cascade (QC) active regions based on InGsAs/InP heterostructures was studied. The realization of InP-based QC lasers with aluminum-free waveguides was also discussed. A highly doped (n=10 18 cm -3) GaInAs contact layer was grown on top of an active core. A fourier transform infrared (FTIR) spectrometer equipped with a liquid N 2 cooled HgCdTe detector was used for the spectral measurements.

Original languageEnglish (US)
Pages (from-to)7101-7104
Number of pages4
JournalJournal of Applied Physics
Volume94
Issue number11
DOIs
StatePublished - Dec 1 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Troccoli, M., Capasso, F., Chen, J., Peabody, M. L., Gmachl, C., Sivco, D. L., Chen, C. H., & Cho, A. Y. (2003). Midinfrared electroluminescence in quantum cascade structures with InP/InGaAs active regions. Journal of Applied Physics, 94(11), 7101-7104. https://doi.org/10.1063/1.1625090