Mid-infrared surface plasmon coupled emitters utilizing intersublevel transitions in InAs quantum dots

Eric A. Shaner; Brandon S. Passmore; David Adams; Troy Ribaudo; Stephen A. Lyon; Weng Chow; Daniel Wasserman

doi:10.1117/12.861060

Mid-infrared surface plasmon coupled emitters utilizing intersublevel transitions in InAs quantum dots

Eric A. Shaner, Brandon S. Passmore, David Adams, Troy Ribaudo, Stephen A. Lyon, Weng Chow, Daniel Wasserman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate mid-infrared electroluminescence from intersublevel transitions in self-assembled InAs quantum dots coupled to surface plasmon modes on metal hole arrays. Subwavelength metal hole arrays with different periodicity are patterned into the top contact of the broadband (9 - 15 μm) quantum dot material and the measured electroluminescence is compared to devices without a metal hole array. The resulting normally directed emission is narrowed and a splitting in the spectral structure is observed. By applying a coupled quantum electrodynamic model and using reasonable values for quantum dot distributions and plasmon linewidths we are able to reproduce the experimentally measured spectral characteristics of device emission when using strong coupling parameters.

Original language	English (US)
Title of host publication	Active Photonic Materials III
DOIs	https://doi.org/10.1117/12.861060
State	Published - 2010
Event	Active Photonic Materials III - San Diego, CA, United States Duration: Aug 2 2010 → Aug 5 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7756
ISSN (Print)	0277-786X

Other

Other	Active Photonic Materials III
Country/Territory	United States
City	San Diego, CA
Period	8/2/10 → 8/5/10

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.861060

Cite this

Shaner, E. A., Passmore, B. S., Adams, D., Ribaudo, T., Lyon, S. A., Chow, W., & Wasserman, D. (2010). Mid-infrared surface plasmon coupled emitters utilizing intersublevel transitions in InAs quantum dots. In Active Photonic Materials III Article 77560Q (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7756). https://doi.org/10.1117/12.861060

@inproceedings{150424232ecc4c66b434671afd2b352a,

title = "Mid-infrared surface plasmon coupled emitters utilizing intersublevel transitions in InAs quantum dots",

abstract = "We demonstrate mid-infrared electroluminescence from intersublevel transitions in self-assembled InAs quantum dots coupled to surface plasmon modes on metal hole arrays. Subwavelength metal hole arrays with different periodicity are patterned into the top contact of the broadband (9 - 15 μm) quantum dot material and the measured electroluminescence is compared to devices without a metal hole array. The resulting normally directed emission is narrowed and a splitting in the spectral structure is observed. By applying a coupled quantum electrodynamic model and using reasonable values for quantum dot distributions and plasmon linewidths we are able to reproduce the experimentally measured spectral characteristics of device emission when using strong coupling parameters.",

author = "Shaner, {Eric A.} and Passmore, {Brandon S.} and David Adams and Troy Ribaudo and Lyon, {Stephen A.} and Weng Chow and Daniel Wasserman",

year = "2010",

doi = "10.1117/12.861060",

language = "English (US)",

isbn = "9780819482525",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Active Photonic Materials III",

}

Shaner, EA, Passmore, BS, Adams, D, Ribaudo, T, Lyon, SA, Chow, W & Wasserman, D 2010, Mid-infrared surface plasmon coupled emitters utilizing intersublevel transitions in InAs quantum dots. in Active Photonic Materials III., 77560Q, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7756, Active Photonic Materials III, San Diego, CA, United States, 8/2/10. https://doi.org/10.1117/12.861060

Mid-infrared surface plasmon coupled emitters utilizing intersublevel transitions in InAs quantum dots. / Shaner, Eric A.; Passmore, Brandon S.; Adams, David et al.
Active Photonic Materials III. 2010. 77560Q (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7756).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Mid-infrared surface plasmon coupled emitters utilizing intersublevel transitions in InAs quantum dots

AU - Shaner, Eric A.

AU - Passmore, Brandon S.

AU - Adams, David

AU - Ribaudo, Troy

AU - Lyon, Stephen A.

AU - Chow, Weng

AU - Wasserman, Daniel

PY - 2010

Y1 - 2010

N2 - We demonstrate mid-infrared electroluminescence from intersublevel transitions in self-assembled InAs quantum dots coupled to surface plasmon modes on metal hole arrays. Subwavelength metal hole arrays with different periodicity are patterned into the top contact of the broadband (9 - 15 μm) quantum dot material and the measured electroluminescence is compared to devices without a metal hole array. The resulting normally directed emission is narrowed and a splitting in the spectral structure is observed. By applying a coupled quantum electrodynamic model and using reasonable values for quantum dot distributions and plasmon linewidths we are able to reproduce the experimentally measured spectral characteristics of device emission when using strong coupling parameters.

AB - We demonstrate mid-infrared electroluminescence from intersublevel transitions in self-assembled InAs quantum dots coupled to surface plasmon modes on metal hole arrays. Subwavelength metal hole arrays with different periodicity are patterned into the top contact of the broadband (9 - 15 μm) quantum dot material and the measured electroluminescence is compared to devices without a metal hole array. The resulting normally directed emission is narrowed and a splitting in the spectral structure is observed. By applying a coupled quantum electrodynamic model and using reasonable values for quantum dot distributions and plasmon linewidths we are able to reproduce the experimentally measured spectral characteristics of device emission when using strong coupling parameters.

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U2 - 10.1117/12.861060

DO - 10.1117/12.861060

M3 - Conference contribution

AN - SCOPUS:79953037495

SN - 9780819482525

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Active Photonic Materials III

T2 - Active Photonic Materials III

Y2 - 2 August 2010 through 5 August 2010

ER -

Mid-infrared surface plasmon coupled emitters utilizing intersublevel transitions in InAs quantum dots

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