Mid-infrared photoconductivity in InAs quantum dots

K. W. Berryman; S. A. Lyon; Mordechai Segev

doi:10.1063/1.118714

Mid-infrared photoconductivity in InAs quantum dots

K. W. Berryman
, S. A. Lyon
, Mordechai Segev

Research output: Contribution to journal › Article › peer-review

202 Scopus citations

Abstract

Mid-infrared photoconductivity in self-assembled InAs quantum dots is reported. By embedding the InAs dots in an Al_xGa_1-xAs matrix, normal incidence photoconductivity has been observed at a range of wavelengths in the mid-infrared and is attributed to single carrier transitions out of the dots. The optical response of the quantum dots is investigated for several different dot structures.

Original language	English (US)
Pages (from-to)	1861-1863
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	14
DOIs	https://doi.org/10.1063/1.118714
State	Published - Apr 7 1997

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.118714

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title = "Mid-infrared photoconductivity in InAs quantum dots",

abstract = "Mid-infrared photoconductivity in self-assembled InAs quantum dots is reported. By embedding the InAs dots in an AlxGa1-xAs matrix, normal incidence photoconductivity has been observed at a range of wavelengths in the mid-infrared and is attributed to single carrier transitions out of the dots. The optical response of the quantum dots is investigated for several different dot structures.",

author = "Berryman, \{K. W.\} and Lyon, \{S. A.\} and Mordechai Segev",

year = "1997",

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language = "English (US)",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Mid-infrared photoconductivity in InAs quantum dots

AU - Berryman, K. W.

AU - Lyon, S. A.

AU - Segev, Mordechai

PY - 1997/4/7

Y1 - 1997/4/7

N2 - Mid-infrared photoconductivity in self-assembled InAs quantum dots is reported. By embedding the InAs dots in an AlxGa1-xAs matrix, normal incidence photoconductivity has been observed at a range of wavelengths in the mid-infrared and is attributed to single carrier transitions out of the dots. The optical response of the quantum dots is investigated for several different dot structures.

AB - Mid-infrared photoconductivity in self-assembled InAs quantum dots is reported. By embedding the InAs dots in an AlxGa1-xAs matrix, normal incidence photoconductivity has been observed at a range of wavelengths in the mid-infrared and is attributed to single carrier transitions out of the dots. The optical response of the quantum dots is investigated for several different dot structures.

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UR - https://www.scopus.com/pages/publications/0031557568#tab=citedBy

U2 - 10.1063/1.118714

DO - 10.1063/1.118714

M3 - Article

AN - SCOPUS:0031557568

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VL - 70

SP - 1861

EP - 1863

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Mid-infrared photoconductivity in InAs quantum dots

Abstract

All Science Journal Classification (ASJC) codes

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