Mid-infrared photoconductivity in InAs quantum dots

K. W. Berryman, S. A. Lyon, Mordechai Segev

Research output: Contribution to journalArticle

191 Scopus citations

Abstract

Mid-infrared photoconductivity in self-assembled InAs quantum dots is reported. By embedding the InAs dots in an AlxGa1-xAs matrix, normal incidence photoconductivity has been observed at a range of wavelengths in the mid-infrared and is attributed to single carrier transitions out of the dots. The optical response of the quantum dots is investigated for several different dot structures.

Original languageEnglish (US)
Pages (from-to)1861-1863
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number14
DOIs
StatePublished - Apr 7 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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