Mid-infrared photoconductivity in self-assembled InAs quantum dots is reported. By embedding the InAs dots in an AlxGa1-xAs matrix, normal incidence photoconductivity has been observed at a range of wavelengths in the mid-infrared and is attributed to single carrier transitions out of the dots. The optical response of the quantum dots is investigated for several different dot structures.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Apr 7 1997|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)