Mid-infrared GaN/AlxGa1-xN quantum cascade detectors grown by MOCVD

Yu Song, Rajaram Bhat, Pranav Badami, Tzu Yung Huang, Chung En Zah, Claire F. Gmachl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A III-nitride-based Quantum Cascade detector grown by MOCVD is designed, fabricated and tested. Peak responsivity of 100 A/W with detectivity of up to 108 Jones at ∼ 4 μm is measured.

Original languageEnglish (US)
Title of host publication2014 Conference on Lasers and Electro-Optics, CLEO 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2014-January
StatePublished - Jan 1 2014
Event2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other2014 Conference on Lasers and Electro-Optics, CLEO 2014
CountryUnited States
CitySan Jose
Period6/8/146/13/14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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    Song, Y., Bhat, R., Badami, P., Huang, T. Y., Zah, C. E., & Gmachl, C. F. (2014). Mid-infrared GaN/AlxGa1-xN quantum cascade detectors grown by MOCVD. In 2014 Conference on Lasers and Electro-Optics, CLEO 2014 (Vol. 2014-January). [6989818] Institute of Electrical and Electronics Engineers Inc..