Mid-infrared excitation of plasmonic resonances in highly anisotropic layered semiconductor structures

A. J. Hoffman, L. Alekseyev, D. L. Sivco, E. E. Narimanov, Claire F. Gmachl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricate degenerately doped quantum well superlattices and highly doped n+-i-n+ heterostructures and examine their optical anisotropy. We demonstrate that the n+-i-n+ metamaterial has sufficient anisotropy to exhibit negative refraction over a wide range of incident angles and wavelengths. Further, we show that the interval of high anisotropy, and thus negative refraction, can be controlled through the doping density in the structures.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages1425-1426
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: Jul 24 2006Jul 28 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period7/24/067/28/06

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Keywords

  • Anisotropy
  • Metamaterial
  • Negative refraction

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  • Cite this

    Hoffman, A. J., Alekseyev, L., Sivco, D. L., Narimanov, E. E., & Gmachl, C. F. (2007). Mid-infrared excitation of plasmonic resonances in highly anisotropic layered semiconductor structures. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 1425-1426). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2730440