Mid-infrared emitters utilizing intersublevel transitions in self assembled InAs quantum dots

T. Ribaudo, B. S. Passmore, D. C. Adams, X. Qian, S. Vangala, W. D. Goodhue, E. A. Shaner, Stephen Aplin Lyon, D. Wasserman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate room temperature electroluminescence from intersublevel transitions in self-assembled InAs quantum dots in GaAs/AlGaAs heterostructures. The quantum dot devices are grown on GaAs substrates in a Varian Gen II molecular beam epitaxy system. The device structure is designed specifically to inject carriers into excited conduction band states in the dots and force an optical transition between the excited and ground states of the dots. A downstream filter is designed to selectively extract carriers from the dot ground states. Electroluminescence measurements were made by Fourier Transform Infrared Spectroscopy in amplitude modulation step scan mode. Current-Voltage measurements of the devices are also reported. In addition, both single period and multi-period devices are grown, fabricated, characterized, and compared to each other. Finally, we discuss the use of plasmonic output couplers for these devices, and discuss the unique emission observed when the quantum dot layer sits in the near field of the plasmonic top contacts.

Original languageEnglish (US)
Title of host publicationNovel In-Plane Semiconductor Lasers IX
DOIs
StatePublished - May 3 2010
EventNovel In-Plane Semiconductor Lasers IX - San Francisco, CA, United States
Duration: Jan 25 2010Jan 28 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7616
ISSN (Print)0277-786X

Other

OtherNovel In-Plane Semiconductor Lasers IX
CountryUnited States
CitySan Francisco, CA
Period1/25/101/28/10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Keywords

  • Mid-infrared
  • Quantum cascade laser
  • Quantum dots
  • Surface plasmons

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  • Cite this

    Ribaudo, T., Passmore, B. S., Adams, D. C., Qian, X., Vangala, S., Goodhue, W. D., Shaner, E. A., Lyon, S. A., & Wasserman, D. (2010). Mid-infrared emitters utilizing intersublevel transitions in self assembled InAs quantum dots. In Novel In-Plane Semiconductor Lasers IX [76161A] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7616). https://doi.org/10.1117/12.843033