Electroluminescence from self-assembled InAs quantum dots in cascade-like unipolar heterostructures is demonstrated. Initial results show weak luminescence signals in the mid-infrared from such structures, though more recent designs exhibit significantly stronger luminescence with improved designs of the active region of these devices. Further studies of mid-infrared emitting quantum dot structures have shown anisotropically polarized emission at multiple wavelengths. A qualitative explanation of such luminescence is developed and used to understand the growth morphology of buried quantum dots grown on AlAs layers. Finally, a novel design for future mid-infrared quantum dot emitters, intended to increase excited state scattering times and, at the same time, more efficiently extract carriers from the lowest states of our quantum dots, is presented,.