Microwave radiation induced instability in photoexcited undoped GaAs

B. M. Ashkinadze; E. Cohen; A. Ron; L. N. Pfeiffer

doi:10.1088/0268-1242/9/5S/046

Microwave radiation induced instability in photoexcited undoped GaAs

B. M. Ashkinadze, E. Cohen, A. Ron, L. N. Pfeiffer

Electrical and Computer Engineering

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2 Scopus citations

Abstract

The photoinduced microwave absorption in undoped bulk GaAs crystals is studied at low temperatures. It is observed that when the microwave power and exciting light intensity exceed certain threshold values, self-oscillations appear in the microwave absorption. The oscillation frequency is dependent on the light intensity and also on the external magnetic field. This phenomenon is qualitatively explained in terms of impact ionization of shallow donors that are neutralized by the photoexcitation.

Original language	English (US)
Article number	046
Pages (from-to)	570-572
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	9
Issue number	5 S
DOIs	https://doi.org/10.1088/0268-1242/9/5S/046
State	Published - 1994

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/9/5S/046

Cite this

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title = "Microwave radiation induced instability in photoexcited undoped GaAs",

abstract = "The photoinduced microwave absorption in undoped bulk GaAs crystals is studied at low temperatures. It is observed that when the microwave power and exciting light intensity exceed certain threshold values, self-oscillations appear in the microwave absorption. The oscillation frequency is dependent on the light intensity and also on the external magnetic field. This phenomenon is qualitatively explained in terms of impact ionization of shallow donors that are neutralized by the photoexcitation.",

author = "Ashkinadze, {B. M.} and E. Cohen and A. Ron and Pfeiffer, {L. N.}",

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AU - Ashkinadze, B. M.

AU - Cohen, E.

AU - Ron, A.

AU - Pfeiffer, L. N.

PY - 1994

Y1 - 1994

N2 - The photoinduced microwave absorption in undoped bulk GaAs crystals is studied at low temperatures. It is observed that when the microwave power and exciting light intensity exceed certain threshold values, self-oscillations appear in the microwave absorption. The oscillation frequency is dependent on the light intensity and also on the external magnetic field. This phenomenon is qualitatively explained in terms of impact ionization of shallow donors that are neutralized by the photoexcitation.

AB - The photoinduced microwave absorption in undoped bulk GaAs crystals is studied at low temperatures. It is observed that when the microwave power and exciting light intensity exceed certain threshold values, self-oscillations appear in the microwave absorption. The oscillation frequency is dependent on the light intensity and also on the external magnetic field. This phenomenon is qualitatively explained in terms of impact ionization of shallow donors that are neutralized by the photoexcitation.

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IS - 5 S

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ER -

Microwave radiation induced instability in photoexcited undoped GaAs

Abstract

All Science Journal Classification (ASJC) codes

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