Microwave modulation of the photoluminescence due to separately localized e-h pairs in quantum wells

B. M. Ashkinadze; E. Lifshitz; L. N. Pfeiffer

doi:10.1016/0022-2313(94)90174-0

Microwave modulation of the photoluminescence due to separately localized e-h pairs in quantum wells

B. M. Ashkinadze, E. Lifshitz, L. N. Pfeiffer

Research output: Contribution to journal › Article › peer-review

Abstract

The LO-phonon sideband in the photoluminescence spectrum of GaAs/AlGaAs quantum wells contains the radiative recombination of separately localized e-h pairs. The intensity of this sideband luminescence is reduced under microwave irradiation. This quenching is associated with microwave heating of free electrons and holes, resulting in an impact activation of localized electrons and holes into delocalized states.

Original language	English (US)
Pages (from-to)	393-395
Number of pages	3
Journal	Journal of Luminescence
Volume	60-61
Issue number	C
DOIs	https://doi.org/10.1016/0022-2313(94)90174-0
State	Published - Apr 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Biophysics
Atomic and Molecular Physics, and Optics
General Chemistry
Biochemistry
Condensed Matter Physics

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10.1016/0022-2313(94)90174-0

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title = "Microwave modulation of the photoluminescence due to separately localized e-h pairs in quantum wells",

abstract = "The LO-phonon sideband in the photoluminescence spectrum of GaAs/AlGaAs quantum wells contains the radiative recombination of separately localized e-h pairs. The intensity of this sideband luminescence is reduced under microwave irradiation. This quenching is associated with microwave heating of free electrons and holes, resulting in an impact activation of localized electrons and holes into delocalized states.",

author = "Ashkinadze, {B. M.} and E. Lifshitz and Pfeiffer, {L. N.}",

year = "1994",

month = apr,

doi = "10.1016/0022-2313(94)90174-0",

language = "English (US)",

volume = "60-61",

pages = "393--395",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier B.V.",

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AU - Ashkinadze, B. M.

AU - Lifshitz, E.

AU - Pfeiffer, L. N.

PY - 1994/4

Y1 - 1994/4

N2 - The LO-phonon sideband in the photoluminescence spectrum of GaAs/AlGaAs quantum wells contains the radiative recombination of separately localized e-h pairs. The intensity of this sideband luminescence is reduced under microwave irradiation. This quenching is associated with microwave heating of free electrons and holes, resulting in an impact activation of localized electrons and holes into delocalized states.

AB - The LO-phonon sideband in the photoluminescence spectrum of GaAs/AlGaAs quantum wells contains the radiative recombination of separately localized e-h pairs. The intensity of this sideband luminescence is reduced under microwave irradiation. This quenching is associated with microwave heating of free electrons and holes, resulting in an impact activation of localized electrons and holes into delocalized states.

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U2 - 10.1016/0022-2313(94)90174-0

DO - 10.1016/0022-2313(94)90174-0

M3 - Article

AN - SCOPUS:0028406203

SN - 0022-2313

VL - 60-61

SP - 393

EP - 395

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - C

ER -

Microwave modulation of the photoluminescence due to separately localized e-h pairs in quantum wells

Abstract

All Science Journal Classification (ASJC) codes

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