Abstract
Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 359-364 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 448 |
| State | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 4 1996 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- General Materials Science