Microstructural studies of Co silicide layers formed on SiGe and SiGeC

S. Jin, H. Bender, R. A. Donaton, K. Maex, A. Vantomme, G. Langouche, A. St Amour, J. C. Sturm

Research output: Contribution to journalConference articlepeer-review


Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.

Original languageEnglish (US)
Pages (from-to)359-364
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 2 1996Dec 4 1996

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • General Materials Science


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