Microstructural studies of Co silicide layers formed on SiGe and SiGeC

S. Jin; H. Bender; R. A. Donaton; K. Maex; A. Vantomme; G. Langouche; A. St Amour; James Christopher Sturm

Microstructural studies of Co silicide layers formed on SiGe and SiGeC

S. Jin, H. Bender, R. A. Donaton, K. Maex, A. Vantomme, G. Langouche, A. St Amour, James Christopher Sturm

Research output: Contribution to journal › Article › peer-review

Abstract

Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)₂ is higher for SiGeC than for SiGe.

Original language	English (US)
Pages (from-to)	359-364
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	448
State	Published - Jan 1 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

Cite this

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title = "Microstructural studies of Co silicide layers formed on SiGe and SiGeC",

abstract = "Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.",

author = "S. Jin and H. Bender and Donaton, {R. A.} and K. Maex and A. Vantomme and G. Langouche and Amour, {A. St} and Sturm, {James Christopher}",

year = "1997",

month = jan,

day = "1",

language = "English (US)",

volume = "448",

pages = "359--364",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Microstructural studies of Co silicide layers formed on SiGe and SiGeC

AU - Jin, S.

AU - Bender, H.

AU - Donaton, R. A.

AU - Maex, K.

AU - Vantomme, A.

AU - Langouche, G.

AU - Amour, A. St

AU - Sturm, James Christopher

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.

AB - Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.

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UR - http://www.scopus.com/inward/citedby.url?scp=0030673645&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030673645

SN - 0272-9172

VL - 448

SP - 359

EP - 364

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Microstructural studies of Co silicide layers formed on SiGe and SiGeC

Abstract

All Science Journal Classification (ASJC) codes

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