Microstructural studies of Co silicide layers formed on SiGe and SiGeC

S. Jin, H. Bender, R. A. Donaton, K. Maex, A. Vantomme, G. Langouche, A. St Amour, James Christopher Sturm

Research output: Contribution to journalArticlepeer-review


Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.

Original languageEnglish (US)
Pages (from-to)359-364
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Jan 1 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials


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