Abstract
Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.
Original language | English (US) |
---|---|
Pages (from-to) | 359-364 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 448 |
State | Published - Jan 1 1997 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials