Microstructural studies of Co silicide layers formed on SiGe and SiGeC

S. Jin, H. Bender, R. A. Donaton, K. Maex, A. Vantomme, G. Langouche, A. St Amour, James Christopher Sturm

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Abstract

Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.

Original languageEnglish (US)
Pages (from-to)481-486
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume440
StatePublished - Dec 1 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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    Jin, S., Bender, H., Donaton, R. A., Maex, K., Vantomme, A., Langouche, G., Amour, A. S., & Sturm, J. C. (1997). Microstructural studies of Co silicide layers formed on SiGe and SiGeC. Materials Research Society Symposium - Proceedings, 440, 481-486.