Microstructural studies of Co silicide layers formed on SiGe and SiGeC

S. Jin; H. Bender; R. A. Donaton; K. Maex; A. Vantomme; G. Langouche; A. St Amour; J. C. Sturm

Microstructural studies of Co silicide layers formed on SiGe and SiGeC

S. Jin, H. Bender, R. A. Donaton, K. Maex, A. Vantomme, G. Langouche, A. St Amour, J. C. Sturm

Research output: Contribution to journal › Conference article › peer-review

Abstract

Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)₂ is higher for SiGeC than for SiGe.

Original language	English (US)
Pages (from-to)	481-486
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	440
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 5 1996

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
General Materials Science

Cite this

@article{ef1530e0e61b4451bee2fb2ddf7b3ed2,

title = "Microstructural studies of Co silicide layers formed on SiGe and SiGeC",

abstract = "Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.",

author = "S. Jin and H. Bender and Donaton, {R. A.} and K. Maex and A. Vantomme and G. Langouche and Amour, {A. St} and Sturm, {J. C.}",

year = "1997",

language = "English (US)",

volume = "440",

pages = "481--486",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Symposium ; Conference date: 02-12-1996 Through 05-12-1996",

}

TY - JOUR

T1 - Microstructural studies of Co silicide layers formed on SiGe and SiGeC

AU - Jin, S.

AU - Bender, H.

AU - Donaton, R. A.

AU - Maex, K.

AU - Vantomme, A.

AU - Langouche, G.

AU - Amour, A. St

AU - Sturm, J. C.

PY - 1997

Y1 - 1997

N2 - Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.

AB - Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.

UR - http://www.scopus.com/inward/record.url?scp=0031362313&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031362313&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031362313

SN - 0272-9172

VL - 440

SP - 481

EP - 486

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Symposium

Y2 - 2 December 1996 through 5 December 1996

ER -

Microstructural studies of Co silicide layers formed on SiGe and SiGeC

Abstract

All Science Journal Classification (ASJC) codes

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