Abstract
Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.
Original language | English (US) |
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Pages (from-to) | 481-486 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 440 |
State | Published - 1997 |
Externally published | Yes |
Event | Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 5 1996 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- General Materials Science