Microstructural origin of high mobility in high-performance poly(thieno-thiophene) thin-film transistors

Chenchen Wang; Leslie H. Jimison; Ludwig Goris; Iain McCulloch; Martin Heeney; Alexander Ziegler; Alberto Salleo

doi:10.1002/adma.200902303

Microstructural origin of high mobility in high-performance poly(thieno-thiophene) thin-film transistors

Chenchen Wang, Leslie H. Jimison, Ludwig Goris, Iain McCulloch, Martin Heeney, Alexander Ziegler, Alberto Salleo

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

High-mobility PBTTT thin-film transistors are modeled with a mobility edge model and compared with P3HT. Their improved performance is not due to a low trap density but rather due to high mobility in the crystallites. Characterization of delaminated films with transmission electron microscopy and atomic force microscopy indicates terraces that are composed of nanometer-scale features (see figure).

Original language	English (US)
Pages (from-to)	697-701
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	6
DOIs	https://doi.org/10.1002/adma.200902303
State	Published - Feb 9 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.200902303

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@article{4f7f2d012c69451eaf149571be0f0da5,

title = "Microstructural origin of high mobility in high-performance poly(thieno-thiophene) thin-film transistors",

abstract = "High-mobility PBTTT thin-film transistors are modeled with a mobility edge model and compared with P3HT. Their improved performance is not due to a low trap density but rather due to high mobility in the crystallites. Characterization of delaminated films with transmission electron microscopy and atomic force microscopy indicates terraces that are composed of nanometer-scale features (see figure).",

author = "Chenchen Wang and Jimison, {Leslie H.} and Ludwig Goris and Iain McCulloch and Martin Heeney and Alexander Ziegler and Alberto Salleo",

year = "2010",

month = feb,

day = "9",

doi = "10.1002/adma.200902303",

language = "English (US)",

volume = "22",

pages = "697--701",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "6",

}

TY - JOUR

T1 - Microstructural origin of high mobility in high-performance poly(thieno-thiophene) thin-film transistors

AU - Wang, Chenchen

AU - Jimison, Leslie H.

AU - Goris, Ludwig

AU - McCulloch, Iain

AU - Heeney, Martin

AU - Ziegler, Alexander

AU - Salleo, Alberto

PY - 2010/2/9

Y1 - 2010/2/9

N2 - High-mobility PBTTT thin-film transistors are modeled with a mobility edge model and compared with P3HT. Their improved performance is not due to a low trap density but rather due to high mobility in the crystallites. Characterization of delaminated films with transmission electron microscopy and atomic force microscopy indicates terraces that are composed of nanometer-scale features (see figure).

AB - High-mobility PBTTT thin-film transistors are modeled with a mobility edge model and compared with P3HT. Their improved performance is not due to a low trap density but rather due to high mobility in the crystallites. Characterization of delaminated films with transmission electron microscopy and atomic force microscopy indicates terraces that are composed of nanometer-scale features (see figure).

UR - http://www.scopus.com/inward/record.url?scp=77049097939&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77049097939&partnerID=8YFLogxK

U2 - 10.1002/adma.200902303

DO - 10.1002/adma.200902303

M3 - Article

C2 - 20217772

AN - SCOPUS:77049097939

SN - 0935-9648

VL - 22

SP - 697

EP - 701

JO - Advanced Materials

JF - Advanced Materials

IS - 6

ER -

Microstructural origin of high mobility in high-performance poly(thieno-thiophene) thin-film transistors

Abstract

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