Microsecond carrier lifetimes in strained silicon-germanium alloys grown by rapid thermal chemical vapor deposition

P. V. Schwartz; J. C. Sturm

doi:10.1063/1.103991

Microsecond carrier lifetimes in strained silicon-germanium alloys grown by rapid thermal chemical vapor deposition

P. V. Schwartz
, J. C. Sturm

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We report generation lifetimes of over 1 μs in Si_0.82Ge _0.18 epitaxial strained layers grown by rapid thermal chemical vapor deposition on silicon substrates. By using a pulsed metal-oxide-semiconductor capacitor technique, we were able to probe the minority-carrier properties of a layer of Si_0.82Ge_0.18 sandwiched between two epitaxial layers of silicon. We also show that the band gap and the intrinsic carrier concentration are important when relating experimental results to the generation lifetime τ_g.

Original language	English (US)
Pages (from-to)	2004-2006
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	19
DOIs	https://doi.org/10.1063/1.103991
State	Published - 1990

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.103991

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title = "Microsecond carrier lifetimes in strained silicon-germanium alloys grown by rapid thermal chemical vapor deposition",

abstract = "We report generation lifetimes of over 1 μs in Si0.82Ge 0.18 epitaxial strained layers grown by rapid thermal chemical vapor deposition on silicon substrates. By using a pulsed metal-oxide-semiconductor capacitor technique, we were able to probe the minority-carrier properties of a layer of Si0.82Ge0.18 sandwiched between two epitaxial layers of silicon. We also show that the band gap and the intrinsic carrier concentration are important when relating experimental results to the generation lifetime τg.",

author = "Schwartz, \{P. V.\} and Sturm, \{J. C.\}",

year = "1990",

doi = "10.1063/1.103991",

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pages = "2004--2006",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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AU - Schwartz, P. V.

AU - Sturm, J. C.

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N2 - We report generation lifetimes of over 1 μs in Si0.82Ge 0.18 epitaxial strained layers grown by rapid thermal chemical vapor deposition on silicon substrates. By using a pulsed metal-oxide-semiconductor capacitor technique, we were able to probe the minority-carrier properties of a layer of Si0.82Ge0.18 sandwiched between two epitaxial layers of silicon. We also show that the band gap and the intrinsic carrier concentration are important when relating experimental results to the generation lifetime τg.

AB - We report generation lifetimes of over 1 μs in Si0.82Ge 0.18 epitaxial strained layers grown by rapid thermal chemical vapor deposition on silicon substrates. By using a pulsed metal-oxide-semiconductor capacitor technique, we were able to probe the minority-carrier properties of a layer of Si0.82Ge0.18 sandwiched between two epitaxial layers of silicon. We also show that the band gap and the intrinsic carrier concentration are important when relating experimental results to the generation lifetime τg.

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U2 - 10.1063/1.103991

DO - 10.1063/1.103991

M3 - Article

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SN - 0003-6951

VL - 57

SP - 2004

EP - 2006

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

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Microsecond carrier lifetimes in strained silicon-germanium alloys grown by rapid thermal chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

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