Abstract
We report a two-dimensional artificial lattice for dipolar excitons confined in a GaAs double quantum well. Exploring the regime of large fillings per lattice site, we verify that the lattice depth competes with the magnitude of exciton repulsive dipolar interactions to control the degree of localization in the lattice potential. Moreover, we show that dipolar excitons radiate a narrow-band photoluminescence with a spectral width of a few hundreds of μeV at 340 mK, in both localized and delocalized regimes. This makes our device suitable for explorations of dipolar excitons quasicondensation in a periodic potential.
Original language | English (US) |
---|---|
Article number | 245428 |
Journal | Physical Review B |
Volume | 102 |
Issue number | 24 |
DOIs | |
State | Published - Dec 29 2020 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics