Microscopic calculation of differential reflectivity of GaP(110)

F. Manghi; E. Molinari; R. Del Sole; A. Selloni

doi:10.1016/S0039-6028(87)80545-9

Microscopic calculation of differential reflectivity of GaP(110)

F. Manghi, E. Molinari, R. Del Sole, A. Selloni

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We compute the optical properties of semiconductor surfaces starting from the self-consistent electronic structures determined using local pseudopotentials with a plane-wave basis set. Calculations for a 9 layer (110) slab of GaP are carried out with both clean and H covered surfaces. Differential reflectivity spectra and their anisotropies are interpreted in terms of transitions involving surface states.

Original language	English (US)
Pages (from-to)	1028-1032
Number of pages	5
Journal	Surface Science
Volume	189-190
Issue number	C
DOIs	https://doi.org/10.1016/S0039-6028(87)80545-9
State	Published - Oct 2 1987
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(87)80545-9

Cite this

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title = "Microscopic calculation of differential reflectivity of GaP(110)",

abstract = "We compute the optical properties of semiconductor surfaces starting from the self-consistent electronic structures determined using local pseudopotentials with a plane-wave basis set. Calculations for a 9 layer (110) slab of GaP are carried out with both clean and H covered surfaces. Differential reflectivity spectra and their anisotropies are interpreted in terms of transitions involving surface states.",

author = "F. Manghi and E. Molinari and {Del Sole}, R. and A. Selloni",

year = "1987",

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doi = "10.1016/S0039-6028(87)80545-9",

language = "English (US)",

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number = "C",

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T1 - Microscopic calculation of differential reflectivity of GaP(110)

AU - Manghi, F.

AU - Molinari, E.

AU - Del Sole, R.

AU - Selloni, A.

PY - 1987/10/2

Y1 - 1987/10/2

N2 - We compute the optical properties of semiconductor surfaces starting from the self-consistent electronic structures determined using local pseudopotentials with a plane-wave basis set. Calculations for a 9 layer (110) slab of GaP are carried out with both clean and H covered surfaces. Differential reflectivity spectra and their anisotropies are interpreted in terms of transitions involving surface states.

AB - We compute the optical properties of semiconductor surfaces starting from the self-consistent electronic structures determined using local pseudopotentials with a plane-wave basis set. Calculations for a 9 layer (110) slab of GaP are carried out with both clean and H covered surfaces. Differential reflectivity spectra and their anisotropies are interpreted in terms of transitions involving surface states.

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UR - http://www.scopus.com/inward/citedby.url?scp=58149368369&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(87)80545-9

DO - 10.1016/S0039-6028(87)80545-9

M3 - Article

AN - SCOPUS:58149368369

SN - 0039-6028

VL - 189-190

SP - 1028

EP - 1032

JO - Surface Science

JF - Surface Science

IS - C

ER -

Microscopic calculation of differential reflectivity of GaP(110)

Abstract

All Science Journal Classification (ASJC) codes

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