Abstract
Micro-photoluminescence (PL) and micro-PL excitation (PLE) spectra were measured systematically in a 5 nm GaAs/AlAs single quantum well (QW) to investigate the predicted effect of asymmetric exciton absorption line shapes having high-energy tails due to weak localization of exciton center-of-mass motion by interface roughness. We found a characteristic change in the asymmetric shapes as the QW-interface coverage by monolayer terraces varied. Via spectral fitting using a reported model, we quantitatively obtained a localization length varying between 4-15 nm, and verified the validity as well as limitation of this model.
Original language | English (US) |
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Pages (from-to) | 114-117 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 147 |
Issue number | 3-4 |
DOIs | |
State | Published - Jul 2008 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry
Keywords
- A. Quantum wells
- D. Exciton localization
- D. Optical properties
- E. Photoluminescence