Micro-photoluminescence characterization of local electronic states in a (110) GaAs quantum well fabricated by cleaved-edge overgrowth

Ji Won Oh; Masahiro Yoshita; Yuhei Hayamizu; Hidefumi Akiyama; Loren N. Pfeiffer; Ken W. West

doi:10.1063/1.1804248

Micro-photoluminescence characterization of local electronic states in a (110) GaAs quantum well fabricated by cleaved-edge overgrowth

Ji Won Oh, Masahiro Yoshita, Yuhei Hayamizu, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Local electronic states due to characteristic surface islands and pits formed on an atomically flat (110) GaAs interface of a quantum well fabricated by a cleaved-edge-overgrowth method with high-temperature growth-interrupt annealing are characterized by micro-photoluminescence (PL) imaging and spectroscopy. With the overall observation of the 6-nm-thick (110) quantum well with the area of 6.8-μm width and 3-mm length, we found local PL signals due to isolated 2- or 3-monolayer (ML) islands, isolated 1-ML pits, and 1-ML islands and pits formed along the cleavage atomic-step lines, and gradual change of the states across the full range of the sample.

Original language	English (US)
Pages (from-to)	6370-6374
Number of pages	5
Journal	Journal of Applied Physics
Volume	96
Issue number	11
DOIs	https://doi.org/10.1063/1.1804248
State	Published - Dec 1 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1804248

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title = "Micro-photoluminescence characterization of local electronic states in a (110) GaAs quantum well fabricated by cleaved-edge overgrowth",

abstract = "Local electronic states due to characteristic surface islands and pits formed on an atomically flat (110) GaAs interface of a quantum well fabricated by a cleaved-edge-overgrowth method with high-temperature growth-interrupt annealing are characterized by micro-photoluminescence (PL) imaging and spectroscopy. With the overall observation of the 6-nm-thick (110) quantum well with the area of 6.8-μm width and 3-mm length, we found local PL signals due to isolated 2- or 3-monolayer (ML) islands, isolated 1-ML pits, and 1-ML islands and pits formed along the cleavage atomic-step lines, and gradual change of the states across the full range of the sample.",

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T1 - Micro-photoluminescence characterization of local electronic states in a (110) GaAs quantum well fabricated by cleaved-edge overgrowth

AU - Oh, Ji Won

AU - Yoshita, Masahiro

AU - Hayamizu, Yuhei

AU - Akiyama, Hidefumi

AU - Pfeiffer, Loren N.

AU - West, Ken W.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Local electronic states due to characteristic surface islands and pits formed on an atomically flat (110) GaAs interface of a quantum well fabricated by a cleaved-edge-overgrowth method with high-temperature growth-interrupt annealing are characterized by micro-photoluminescence (PL) imaging and spectroscopy. With the overall observation of the 6-nm-thick (110) quantum well with the area of 6.8-μm width and 3-mm length, we found local PL signals due to isolated 2- or 3-monolayer (ML) islands, isolated 1-ML pits, and 1-ML islands and pits formed along the cleavage atomic-step lines, and gradual change of the states across the full range of the sample.

AB - Local electronic states due to characteristic surface islands and pits formed on an atomically flat (110) GaAs interface of a quantum well fabricated by a cleaved-edge-overgrowth method with high-temperature growth-interrupt annealing are characterized by micro-photoluminescence (PL) imaging and spectroscopy. With the overall observation of the 6-nm-thick (110) quantum well with the area of 6.8-μm width and 3-mm length, we found local PL signals due to isolated 2- or 3-monolayer (ML) islands, isolated 1-ML pits, and 1-ML islands and pits formed along the cleavage atomic-step lines, and gradual change of the states across the full range of the sample.

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Micro-photoluminescence characterization of local electronic states in a (110) GaAs quantum well fabricated by cleaved-edge overgrowth

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