Micro-electro-mechanical charge sensing devices

K. Pangal, S. L. Firebaugh, James Christopher Sturm

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations


In recent years, it has been reported that plasma non uniformity across the wafer due to non-uniformities in RF current flow, electron current flow, and ion current flow can cause significant charging of surfaces, which can severely degrade or destroy devices, especially MOS gate dielectrics. This work reports, a device which can non-invasively measure this charging in-situ, in real time, in the plasma reactor, as opposed to the conventional method of inferring the charge from later measurement of device degradation. The charging is measured in-situ by measuring the deflection of micro-cantilevers. The device can be used to measure charging in reactors without optical ports, and to quickly map charging non-uniformities across a wafer surface. In addition to being useful as a charge sensing device for plasma processing, the device may be useful for general purpose sensing of surface charge.

Original languageEnglish (US)
Number of pages2
StatePublished - Jan 1 1996
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA
Duration: Jun 24 1996Jun 26 1996


OtherProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CitySanta Barbara, CA, USA

All Science Journal Classification (ASJC) codes

  • General Engineering


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