TY - JOUR
T1 - Methods for Color Center Preserving Hydrogen-Termination of Diamond
AU - McCloskey, Daniel J.
AU - Roberts, Daniel
AU - Rodgers, Lila V.H.
AU - Barsukov, Yuri
AU - Kaganovich, Igor D.
AU - Simpson, David A.
AU - de Leon, Nathalie P.
AU - Stacey, Alastair
AU - Dontschuk, Nikolai
N1 - Publisher Copyright:
© 2024 The Author(s). Advanced Materials Interfaces published by Wiley-VCH GmbH.
PY - 2024/8/23
Y1 - 2024/8/23
N2 - Chemical functionalization of diamond surfaces by hydrogen is an important method for controlling the charge state of near-surface fluorescent color centers, an essential process in fabricating devices such as diamond field-effect transistors and chemical sensors, and a required first step for realizing families of more complex terminations through subsequent chemical processing. In all these cases, termination is typically achieved using hydrogen plasma sources that can etch or damage the diamond, as well as deposited materials or embedded color centers. This work explores alternative methods for lower-damage hydrogenation of diamond surfaces, specifically the annealing of diamond samples in high-purity, non-explosive mixtures of nitrogen and hydrogen gas, and the exposure of samples to microwave hydrogen plasmas in the absence of intentional stage heating. The effectiveness of these methods are characterized by x-ray photoelectron spectroscopy (XPS), and comparison of the results to density-functional modelling of the surface hydrogenation energetics implicates surface oxygen ligands as the primary factor limiting the termination quality of annealed samples. Finally, photoluminescence (PL) spectroscopy is used to verify that both the annealing and reduced sample temperature plasma methods are non-destructive to near-surface ensembles of nitrogen-vacancy (NV) centers, in stark contrast to plasma treatments that use heated sample stages.
AB - Chemical functionalization of diamond surfaces by hydrogen is an important method for controlling the charge state of near-surface fluorescent color centers, an essential process in fabricating devices such as diamond field-effect transistors and chemical sensors, and a required first step for realizing families of more complex terminations through subsequent chemical processing. In all these cases, termination is typically achieved using hydrogen plasma sources that can etch or damage the diamond, as well as deposited materials or embedded color centers. This work explores alternative methods for lower-damage hydrogenation of diamond surfaces, specifically the annealing of diamond samples in high-purity, non-explosive mixtures of nitrogen and hydrogen gas, and the exposure of samples to microwave hydrogen plasmas in the absence of intentional stage heating. The effectiveness of these methods are characterized by x-ray photoelectron spectroscopy (XPS), and comparison of the results to density-functional modelling of the surface hydrogenation energetics implicates surface oxygen ligands as the primary factor limiting the termination quality of annealed samples. Finally, photoluminescence (PL) spectroscopy is used to verify that both the annealing and reduced sample temperature plasma methods are non-destructive to near-surface ensembles of nitrogen-vacancy (NV) centers, in stark contrast to plasma treatments that use heated sample stages.
KW - X-ray photoelectron spectroscopy
KW - diamond
KW - forming gas
KW - hydrogen-termination
KW - nitrogen-vacancy
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U2 - 10.1002/admi.202400242
DO - 10.1002/admi.202400242
M3 - Article
AN - SCOPUS:85198051716
SN - 2196-7350
VL - 11
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
IS - 24
M1 - 2400242
ER -