Metal-insulator transitions in pure and doped V2O3

D. B. McWhan, A. Menth, J. P. Remeika, W. F. Brinkman, T. M. Rice

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Abstract

The addition of Ti3+ and Mg2+ to V2O3 leads to the suppression of the antiferromagnetic insulating phase; whereas the addition of Ti4+, Zr4+, and Fe3+ results in a first-order transition from a metallic to an insulating state. The effect of impurity ions is discussed in terms of the changes they cause in the bandwidth in analogy with the effect of pressure. The Hall coefficient of metallic V2O3 at 4.2°K and 20 kbar is RH=+(3.5±0.4)×10-4 cm3/C which is close to the value measured at 150°K and 1 atm. The residual resistivity of metallic V2O3 is strongly impurity dependent (140 cm/at.% Cr and 35 cm/at.% Ti). These results are not completely consistent with current theories for the metal-insulator transition in V2O3 but the best available model still seems to involve a localized-to-nonlocalized transition within the d band primarily involving orbitals in the basal plane.

Original languageEnglish (US)
Pages (from-to)1920-1931
Number of pages12
JournalPhysical Review B
Volume7
Issue number5
DOIs
StatePublished - Jan 1 1973
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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    McWhan, D. B., Menth, A., Remeika, J. P., Brinkman, W. F., & Rice, T. M. (1973). Metal-insulator transitions in pure and doped V2O3. Physical Review B, 7(5), 1920-1931. https://doi.org/10.1103/PhysRevB.7.1920