Metal-insulator transition of 2D electrons in a modulation doped Si/Si 1-xGex heterostructure

K. Lai, W. Pan, D. C. Tsui, Stephen Aplin Lyon, M. Mühlberger, F. Schäffler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the observation of the apparent metal-insulator transition (MIT) of two-dimensional electrons in a high quality modulation doped Si/Si 1-xGex heterostructure. The critical density n c, at which the thermal coefficient of its low temperature resistivity changes sign, is 0.32×1011 cm-2, much smaller than the nc of ∼ 0.8×1011cm-2 seen in clean Si-MOSFET's. This is consistent with previous observations in 2D holes in GaAs that nc decreases with decreasing disorder.

Original languageEnglish (US)
Title of host publicationLOW TEMPERATURE PHYSICS
Subtitle of host publication24th International Conference on Low Temperature Physics - LT24
Pages1448-1449
Number of pages2
DOIs
StatePublished - Dec 1 2006
EventLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States
Duration: Aug 10 2006Oct 17 2006

Publication series

NameAIP Conference Proceedings
Volume850
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
CountryUnited States
CityOrlando, FL
Period8/10/0610/17/06

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Lai, K., Pan, W., Tsui, D. C., Lyon, S. A., Mühlberger, M., & Schäffler, F. (2006). Metal-insulator transition of 2D electrons in a modulation doped Si/Si 1-xGex heterostructure. In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 (pp. 1448-1449). (AIP Conference Proceedings; Vol. 850). https://doi.org/10.1063/1.2355247