Metal-insulator transition of 2D electrons in a modulation doped Si/Si 1-xGex heterostructure

K. Lai; W. Pan; D. C. Tsui; S. A. Lyon; M. Mühlberger; F. Schäffler

doi:10.1063/1.2355247

Metal-insulator transition of 2D electrons in a modulation doped Si/Si _1-xGe_x heterostructure

K. Lai, W. Pan, D. C. Tsui, S. A. Lyon, M. Mühlberger, F. Schäffler

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report the observation of the apparent metal-insulator transition (MIT) of two-dimensional electrons in a high quality modulation doped Si/Si _1-xGe_x heterostructure. The critical density n _c, at which the thermal coefficient of its low temperature resistivity changes sign, is 0.32×10¹¹ cm^-2, much smaller than the n_c of ∼ 0.8×10¹¹cm^-2 seen in clean Si-MOSFET's. This is consistent with previous observations in 2D holes in GaAs that n_c decreases with decreasing disorder.

Original language	English (US)
Title of host publication	LOW TEMPERATURE PHYSICS
Subtitle of host publication	24th International Conference on Low Temperature Physics - LT24
Pages	1448-1449
Number of pages	2
DOIs	https://doi.org/10.1063/1.2355247
State	Published - 2006
Event	LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States Duration: Aug 10 2006 → Oct 17 2006

Publication series

Name	AIP Conference Proceedings
Volume	850
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
Country/Territory	United States
City	Orlando, FL
Period	8/10/06 → 10/17/06

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Keywords

2D metal-insulator transition
Si/SiGe

Access to Document

10.1063/1.2355247

Cite this

@inproceedings{c63830f5e4234e1ea3b9e43bc7d9bb4c,

title = "Metal-insulator transition of 2D electrons in a modulation doped Si/Si 1-xGex heterostructure",

abstract = "We report the observation of the apparent metal-insulator transition (MIT) of two-dimensional electrons in a high quality modulation doped Si/Si 1-xGex heterostructure. The critical density n c, at which the thermal coefficient of its low temperature resistivity changes sign, is 0.32×1011 cm-2, much smaller than the nc of ∼ 0.8×1011cm-2 seen in clean Si-MOSFET's. This is consistent with previous observations in 2D holes in GaAs that nc decreases with decreasing disorder.",

keywords = "2D metal-insulator transition, Si/SiGe",

author = "K. Lai and W. Pan and Tsui, {D. C.} and Lyon, {S. A.} and M. M{\"u}hlberger and F. Sch{\"a}ffler",

year = "2006",

doi = "10.1063/1.2355247",

language = "English (US)",

isbn = "0735403473",

series = "AIP Conference Proceedings",

pages = "1448--1449",

booktitle = "LOW TEMPERATURE PHYSICS",

note = "LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 ; Conference date: 10-08-2006 Through 17-10-2006",

}

Lai, K, Pan, W, Tsui, DC, Lyon, SA, Mühlberger, M & Schäffler, F 2006, Metal-insulator transition of 2D electrons in a modulation doped Si/Si _1-xGe_x heterostructure. in LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP Conference Proceedings, vol. 850, pp. 1448-1449, LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24, Orlando, FL, United States, 8/10/06. https://doi.org/10.1063/1.2355247

Metal-insulator transition of 2D electrons in a modulation doped Si/Si _1-xGe_x heterostructure. / Lai, K.; Pan, W.; Tsui, D. C. et al.
LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. 2006. p. 1448-1449 (AIP Conference Proceedings; Vol. 850).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Metal-insulator transition of 2D electrons in a modulation doped Si/Si 1-xGex heterostructure

AU - Lai, K.

AU - Pan, W.

AU - Tsui, D. C.

AU - Lyon, S. A.

AU - Mühlberger, M.

AU - Schäffler, F.

PY - 2006

Y1 - 2006

N2 - We report the observation of the apparent metal-insulator transition (MIT) of two-dimensional electrons in a high quality modulation doped Si/Si 1-xGex heterostructure. The critical density n c, at which the thermal coefficient of its low temperature resistivity changes sign, is 0.32×1011 cm-2, much smaller than the nc of ∼ 0.8×1011cm-2 seen in clean Si-MOSFET's. This is consistent with previous observations in 2D holes in GaAs that nc decreases with decreasing disorder.

AB - We report the observation of the apparent metal-insulator transition (MIT) of two-dimensional electrons in a high quality modulation doped Si/Si 1-xGex heterostructure. The critical density n c, at which the thermal coefficient of its low temperature resistivity changes sign, is 0.32×1011 cm-2, much smaller than the nc of ∼ 0.8×1011cm-2 seen in clean Si-MOSFET's. This is consistent with previous observations in 2D holes in GaAs that nc decreases with decreasing disorder.

KW - 2D metal-insulator transition

KW - Si/SiGe

UR - http://www.scopus.com/inward/record.url?scp=33947493429&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947493429&partnerID=8YFLogxK

U2 - 10.1063/1.2355247

DO - 10.1063/1.2355247

M3 - Conference contribution

AN - SCOPUS:33947493429

SN - 0735403473

SN - 9780735403475

T3 - AIP Conference Proceedings

SP - 1448

EP - 1449

BT - LOW TEMPERATURE PHYSICS

T2 - LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24

Y2 - 10 August 2006 through 17 October 2006

ER -