Metal-insulator transition in a doped semiconductor

T. F. Rosenbaum, R. F. Milligan, M. A. Paalanen, G. A. Thomas, R. N. Bhatt, W. Lin

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Abstract

Millikelvin measurements of the conductivity as a function of donor density and uniaxial stress in bulk samples of phosphorus-doped silicon establish that the transition from metal to insulator is continuous, but sharper than predicted by scaling theories of localization. The divergence of the dielectric susceptibility as the transition is approached from below also points out problems in current scaling theories. The temperature dependence of the conductivity and the magnetoresistance in the metal indicate the importance of Coulomb interactions in describing the behavior of disordered systems.

Original languageEnglish (US)
Pages (from-to)7509-7523
Number of pages15
JournalPhysical Review B
Volume27
Issue number12
DOIs
StatePublished - 1983
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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    Rosenbaum, T. F., Milligan, R. F., Paalanen, M. A., Thomas, G. A., Bhatt, R. N., & Lin, W. (1983). Metal-insulator transition in a doped semiconductor. Physical Review B, 27(12), 7509-7523. https://doi.org/10.1103/PhysRevB.27.7509