Metal-insulator transition and itinerant antiferromagnetism in NiS2-xSex pyrite

Shigeki Miyasaka; Hidenori Takagi; Yoshiaki Sekine; Hiroki Takahashi; Nobuo Môri; Robert J. Cava

doi:10.1143/JPSJ.69.3166

Metal-insulator transition and itinerant antiferromagnetism in NiS_2-xSe_x pyrite

Shigeki Miyasaka, Hidenori Takagi, Yoshiaki Sekine, Hiroki Takahashi, Nobuo Môri, Robert J. Cava

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

The bandwidth-controlled metal-insulator (MI) transition in pyrite-type NiS_2-xSe_x has been investigated. The results indicate that the approach to the MI transition from the metallic side is profoundly affected by the presence of the antiferromagnetic metal (AFM) phase (0.4 < x < 1.0) immediately next to the MI phase boundary. In the paramagnetic metal (PM) phase (1.0 < x ≤ 2.0), the approach is simply characterized by mass enhancement. In the AFM phase, however, the approach is driven by a marked decrease in the carrier density on approaching the insulating phase.

Original language	English (US)
Pages (from-to)	3166-3169
Number of pages	4
Journal	Journal of the Physical Society of Japan
Volume	69
Issue number	10
DOIs	https://doi.org/10.1143/JPSJ.69.3166
State	Published - Oct 2000

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Keywords

Electron correlations
Itinerant antiferromagnetism
Metal-insulator transition
NiSSe

Access to Document

10.1143/JPSJ.69.3166

Cite this

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title = "Metal-insulator transition and itinerant antiferromagnetism in NiS2-xSex pyrite",

abstract = "The bandwidth-controlled metal-insulator (MI) transition in pyrite-type NiS2-xSex has been investigated. The results indicate that the approach to the MI transition from the metallic side is profoundly affected by the presence of the antiferromagnetic metal (AFM) phase (0.4 < x < 1.0) immediately next to the MI phase boundary. In the paramagnetic metal (PM) phase (1.0 < x ≤ 2.0), the approach is simply characterized by mass enhancement. In the AFM phase, however, the approach is driven by a marked decrease in the carrier density on approaching the insulating phase.",

keywords = "Electron correlations, Itinerant antiferromagnetism, Metal-insulator transition, NiSSe",

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T1 - Metal-insulator transition and itinerant antiferromagnetism in NiS2-xSex pyrite

AU - Miyasaka, Shigeki

AU - Takagi, Hidenori

AU - Sekine, Yoshiaki

AU - Takahashi, Hiroki

AU - Môri, Nobuo

AU - Cava, Robert J.

PY - 2000/10

Y1 - 2000/10

N2 - The bandwidth-controlled metal-insulator (MI) transition in pyrite-type NiS2-xSex has been investigated. The results indicate that the approach to the MI transition from the metallic side is profoundly affected by the presence of the antiferromagnetic metal (AFM) phase (0.4 < x < 1.0) immediately next to the MI phase boundary. In the paramagnetic metal (PM) phase (1.0 < x ≤ 2.0), the approach is simply characterized by mass enhancement. In the AFM phase, however, the approach is driven by a marked decrease in the carrier density on approaching the insulating phase.

AB - The bandwidth-controlled metal-insulator (MI) transition in pyrite-type NiS2-xSex has been investigated. The results indicate that the approach to the MI transition from the metallic side is profoundly affected by the presence of the antiferromagnetic metal (AFM) phase (0.4 < x < 1.0) immediately next to the MI phase boundary. In the paramagnetic metal (PM) phase (1.0 < x ≤ 2.0), the approach is simply characterized by mass enhancement. In the AFM phase, however, the approach is driven by a marked decrease in the carrier density on approaching the insulating phase.

KW - Electron correlations

KW - Itinerant antiferromagnetism

KW - Metal-insulator transition

KW - NiSSe

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