Metal-containing block copolymer thin films yield wire grid polarizers with high aspect ratio

So Youn Kim; Jessica Gwyther; Ian Manners; Paul M. Chaikin; Richard A. Register

doi:10.1002/adma.201303452

Metal-containing block copolymer thin films yield wire grid polarizers with high aspect ratio

So Youn Kim, Jessica Gwyther, Ian Manners, Paul M. Chaikin, Richard A. Register

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

Highly selective etch masks are formed by thin films of a polystyrene-b-poly(ferrocenylisopropylmethylsilane) diblock copolymer, PS-PFiPMS, containing hemicylindrical domains of PFiPMS. These domains, with a period of 35 nm, are readily aligned through mechanical shear. Aligned PS-PFiPMS templates are employed to fabricate high-aspect-ratio nanowire grids from amorphous silicon, which can polarize deep ultraviolet radiation, including 193 nm, at >90% efficiency.

Original language	English (US)
Pages (from-to)	791-795
Number of pages	5
Journal	Advanced Materials
Volume	26
Issue number	5
DOIs	https://doi.org/10.1002/adma.201303452
State	Published - Feb 5 2014

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
General Materials Science

Keywords

block copolymer lithography
nanopatterning
wire grid polarizer

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10.1002/adma.201303452

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abstract = "Highly selective etch masks are formed by thin films of a polystyrene-b-poly(ferrocenylisopropylmethylsilane) diblock copolymer, PS-PFiPMS, containing hemicylindrical domains of PFiPMS. These domains, with a period of 35 nm, are readily aligned through mechanical shear. Aligned PS-PFiPMS templates are employed to fabricate high-aspect-ratio nanowire grids from amorphous silicon, which can polarize deep ultraviolet radiation, including 193 nm, at >90% efficiency.",

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AU - Kim, So Youn

AU - Gwyther, Jessica

AU - Manners, Ian

AU - Chaikin, Paul M.

AU - Register, Richard A.

PY - 2014/2/5

Y1 - 2014/2/5

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AB - Highly selective etch masks are formed by thin films of a polystyrene-b-poly(ferrocenylisopropylmethylsilane) diblock copolymer, PS-PFiPMS, containing hemicylindrical domains of PFiPMS. These domains, with a period of 35 nm, are readily aligned through mechanical shear. Aligned PS-PFiPMS templates are employed to fabricate high-aspect-ratio nanowire grids from amorphous silicon, which can polarize deep ultraviolet radiation, including 193 nm, at >90% efficiency.

KW - block copolymer lithography

KW - nanopatterning

KW - wire grid polarizer

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Metal-containing block copolymer thin films yield wire grid polarizers with high aspect ratio

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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