Memory effect on the multiphoton coherent destruction of tunneling in the electron transport of nanoscale systems driven by a periodic field: A generalized Floquet approach

Tak San Ho, Shih Han Hung, Hsing Ta Chen, Shih I. Chu

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13 Scopus citations

Abstract

Time-dependent electron-transport processes are often studied in the wide-band limit. In this paper, a generalized Floquet approach beyond the wide-band limit is developed for the general treatment of memory effect on the virtually unexplored multiphoton (MP) coherent destruction of tunneling (CDT) phenomenon of periodically driven electrode-wire-electrode nanoscale systems. As a case study, we apply the approach for a detailed analysis of the electron-transport dc current in the electrode-quantum double dot-electrode system, showing the significance of memory effect as well as illustrating the origin of the MP-CDT phenomenon.

Original languageEnglish (US)
Article number235323
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number23
DOIs
StatePublished - Jun 22 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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